STMicroelectronics 3P6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	8S003F3P6	STMicroelectronics	8-bit MCU Core • 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline • Extended instruction set Memories • Program memory: 8 Kbyte Flash memory; data retention 20 years at 55 °C after 100 cycles • RAM: 1 Kbyte • Data memory: 128 bytes tru
2	STS3P6F6	STMicroelectronics	MOSFET 8 76 5 4 123 SO-8 Figure 1. Internal schematic diagram D (5,6,7,8) Order code STN3P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power
3	3P6F6	STMicroelectronics	P-CHANNEL MOSFET Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power M
4	STN3P6F6	STMicroelectronics	P-CHANNEL POWER MOSFET Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power M