STMicroelectronics 2SC Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC5200	STMicroelectronics	NPN Transistor ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c ■ Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resultin
2	ESDA14V2SC6	STMicroelectronics	QUAD TRANSIL ARRAY n n SOT23-5L (SC-59) ESDAxxSC5 FUNCTIONAL DIAGRAM SOT23-5L SOT23-6L (SC-59) ESDAxxSC6 n 4 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 20 µA at VBR 500 W PEAK PULSE POWER (8/20 µs) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are m
3	ESDA14V2SC5	STMicroelectronics	QUAD TRANSIL ARRAY n n SOT23-5L (SC-59) ESDAxxSC5 FUNCTIONAL DIAGRAM SOT23-5L SOT23-6L (SC-59) ESDAxxSC6 n 4 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 20 µA at VBR 500 W PEAK PULSE POWER (8/20 µs) DESCRIPTION The ESDAxxSC5 and ESDAxxSC6 are m
4	USBLC6-2SC6Y	STMicroelectronics	Automotive very low capacitance ESD protection ■ ■ ■ ■ ■ ■ ■ 2 data lines protected Protects VBUS Very low capacitance: 2.5 pF Very low leakage current: 10 nA SOT23-6L package RoHS compliant AEC-Q101 qualified I/O1 1 1 6 SOT23-6L USBLC6-2SC6Y(JEDEC MO178AB) Figure 1. Functional diagram Benefit
5	ESDALCL6-2SC6	STMicroelectronics	Very low capacitance and low leakage current ESD protection ■ 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 2.5 pF typ. ■ Very low leakage current: – 10 nA at 3 V – 1 nA at 1 V ■ RoHS compliant Complies with the following standards: ■ IEC 61000-4-2 level 4 and higher: – 30 kV (air discharge)