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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS TA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = |
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STMicroelectronics |
SILICON NPN POWER DARLINGTON TRANSISTOR For PNP types voltage and current values are negative. June 1997 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO |
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STMicroelectronics |
NPN Transistor |
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STMicroelectronics |
High voltage fast-switching NPN power transistor roduct(s)1 P2 leteTO-3 ) - ObsoFigure 1: Internal schematic diagram t(sC(TAB) Obsolete ProducB(1) • NPN transistor • High voltage capability • High current capability • Fast switching speed Applications • Switched mode power supplies • Flyback and |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STFI12N60M2 600 V 0.450 Ω 9 A 25 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This de |
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STMicroelectronics |
N-Channel Power MOSFET Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 VDSS @ RDS(on) TJmax max ID PTOT 710 V 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A 70 W 25 W 70 W 70 W 70 W 1. Limited only by maximum temperature allowed. ■ Worldwide best RDS(on) * |
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STMicroelectronics |
N-channel MOSFET Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Lim |
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STMicroelectronics |
N-channel MOSFET TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low R |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax RDS(on) max ID STF42N60M2-EP 650 V 0.087 Ω 34 A STFW42N60M2-EP 3 2 1 TO-220FP TO-3PF Figure 1. Internal schematic diagram ' • Extremely low gate charge • Excellent output capacitance (COSS) profile • Ve |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP STP42N60M2-EP 650 V 0.087 Ω 34 A STW42N60M2-EP • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener |
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STMicroelectronics |
Silicon NPN Transistor |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (D |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID TAB STHU32N65DM6AG 650 V 97 mΩ 37 A 7 1 HU3PAK Drain(TAB) • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 1 |
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STMicroelectronics |
MIDIUM POWER TRANSISTOR |
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STMicroelectronics |
Complementary power Darlington transistors . ■ Good hFE linearity ■ High fT frequency ) ■ Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications ro ■ Linear and switching industrial equipment te PDescription oleThe devices are manufactured |
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STMicroelectronics |
MIDIUM POWER TRANSISTOR |
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STMicroelectronics |
Complementary power Darlington transistors . ■ Good hFE linearity ■ High fT frequency ) ■ Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications ro ■ Linear and switching industrial equipment te PDescription oleThe devices are manufactured |
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STMicroelectronics |
SILICON PNP SWITCHING TRANSISTORS hermal Resistance Junction-ambient Max Max 3.12 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) for for TC for for Test Conditions 2N6107 2N6111 o |
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STMicroelectronics |
Complementary power Darlington transistors ■ Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode t(s)Applications uc ■ Audio power amplifier rod ■ DC-AC converter ■ General purpose switching applications te PDescription oleThe 2N6 |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS TA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = |
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Desde 2024. D4U Semiconductor.
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