| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
Silicon Planar Epitaxial PNP Transistor . Max. -50 -50 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Satu |
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STMicroelectronics |
Silicon Planar Epitaxial transistor (T a mb = 25 °C unless otherwise specified) Symbol I CBO V( BR)CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-Emitter Breakdown Voltage (I B = 0) E |
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STMicroelectronics |
Silicon Planar Epitaxial PNP Transistor CB O V ( BR) CEX * V (BR)CE R * V (BR)CE O * V (B R)E BO V CE( sat )* VB E * h F E* Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector- |
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STMicroelectronics |
Silicon Planar NPN Transistor |
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STMicroelectronics |
Power MOSFET Type STK32N4LLH5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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STMicroelectronics |
Power MOSFET Type STK32N4LLF5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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Desde 2024. D4U Semiconductor.
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