STMicroelectronics 153 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STM32MP153A	STMicroelectronics	Arm dual Cortex-A7 800MHz + Cortex-M4 MPU Includes ST state-of-the-art patented technology Core • 32-bit dual-core Arm® Cortex®-A7 – L1 32-Kbyte I / 32-Kbyte D for each core – 256-Kbyte unified level 2 cache – Arm® NEON™ and Arm® TrustZone® • 32-bit Arm® Cortex®-M4 with FPU/MPU – Up to 209 M
2	IRFP153	STMicroelectronics	N-Channel MOSFET 151 152 150FI 151FI 152FI 153 153FI Vos * VOGR * VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 Kn) Gate-source voltage Drain current (pulsed) 100 60 100 60 100 60 100 60 ±20 160 160 140 140 150 151 152 153 10
3	LCP1531	STMicroelectronics	Programmable transient voltage suppressor • Dual programmable transient suppressor • Wide negative firing voltage range: VGn = -175 V max. • Low dynamic switching voltages: VFP and VDGL • Low gate triggering current: IGT = 5 mA max • Peak pulse current: IPP = 37.5 A (5/310 µs) • Holding curr
4	STM32MP153D	STMicroelectronics	Arm dual Cortex-A7 800MHz + Cortex-M4 MPU Includes ST state-of-the-art patented technology Core • 32-bit dual-core Arm® Cortex®-A7 – L1 32-Kbyte I / 32-Kbyte D for each core – 256-Kbyte unified level 2 cache – Arm® NEON™ and Arm® TrustZone® • 32-bit Arm® Cortex®-M4 with FPU/MPU – Up to 209 M
5	54HC153	STMicroelectronics	Rad-hard high speed 2 to 6V CMOS logic • ESCC qualified • 7 V Absolute maximum ratings • 2 V to 6 V operating voltage for CMOS M54HCxxx series • 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series • Ceramic hermetic packages • -55 °C to +125 °C operating temperature range • Radiatio
6	1534-1	STMicroelectronics	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS BO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 5.5 218.7 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j
7	1538-8	STMicroelectronics	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 11 583 +200 − 65 to
8	STM32MP153F	STMicroelectronics	Arm dual Cortex-A7 800MHz + Cortex-M4 MPU Includes ST state-of-the-art patented technology Core • 32-bit dual-core Arm® Cortex®-A7 – L1 32-Kbyte I / 32-Kbyte D for each core – 256-Kbyte unified level 2 cache – Arm® NEON™ and Arm® TrustZone® • 32-bit Arm® Cortex®-M4 with FPU/MPU – Up to 209 M
9	M54HC153	STMicroelectronics	Rad-hard high speed 2V to 6V CMOS logic • ESCC qualified • 7 V Absolute maximum ratings • 2 V to 6 V operating voltage for CMOS M54HCxxx series • 4.5 V to 5.5 V operating voltage for TTL M54HCTxxx series • Ceramic hermetic packages • -55 °C to +125 °C operating temperature range • Radiatio
10	M74HC153	STMicroelectronics	DUAL 4-CHANNEL MULTIPLEXER uipped with protection circuits against static discharge and transient excess voltage. Obsolete Produ PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10 M74HC153 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNC
11	1530-1	STMicroelectronics	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS BO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j
12	1530-8	STMicroelectronics	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 − 65 to +150 V V V A W °C °C
13	2N5153HR	STMicroelectronics	5A PNP Transistor VCEO IC(max.) 80 V 5A • Hermetic package • ESCC qualified • Up to 100 krad(Si) low dose rate hFE at 5 V, 2.5 A > 70 Operating temperature range -65 °C to +200 °C Description The 2N5153HR is a bipolar transistor able to operate under severe en
14	2ST15300	STMicroelectronics	Rad-Hard NPN bipolar transistors VCBO IC(max.) 300 V 5A • 100 krad • Linear gain characteristics • Inductive load ruggedness HFE at 0.6 V, 250 mA > 55 Tj(max.) 200 °C Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions
15	STM32MP153C	STMicroelectronics	Arm dual Cortex-A7 800MHz + Cortex-M4 MPU Includes ST state-of-the-art patented technology Core • 32-bit dual-core Arm® Cortex®-A7 – L1 32-Kbyte I / 32-Kbyte D for each core – 256-Kbyte unified level 2 cache – Arm® NEON™ and Arm® TrustZone® • 32-bit Arm® Cortex®-M4 with FPU/MPU – Up to 209 M
16	LF153	STMicroelectronics	WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS igh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Part Number LF353 LF253 LF153 Temperature 0 C, +70 C –40oC, +105oC –55 C, +125 C o o o o Package N • • • D • •