| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
Pop-free 120 mW stereo headphone amplifier • Pop and click noise protection circuitry • Operating range from VCC = 2.2 V to 5.5 V • Standby mode active low (TS488) or high (TS489) • Output power: – 120 mW at 5 V, into 16 Ω with 0.1% THD+N max (1 kHz) – 55 mW at 3.3 V, into 16 Ω with 0.1% THD+ |
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ST Microelectronics |
P-CHANNEL POWER MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MO |
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SamHop Microelectronics |
N-Channel MOSFET rce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 2 |
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ST Microelectronics |
P-CHANNEL POWER MOSFET Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz tp = 100 µs Value 30 20 3 75 1 1 Unit V A A A A A 1/8 dv/dt Critica |
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ST Microelectronics |
P-CHANNEL POWER MOSFET everse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 120°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz Value 40 10 3 75 1 1 |
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ST Microelectronics |
Dual N-CHANNEL POWER MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SO-8 INTERNAL S |
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ST Microelectronics |
StripFET MOSFET TYPE STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) s s s Figure 1: Package RDS(on) < 0.055 Ω < 0.120 Ω ID 4A 3A VDSS 60 V 60 V s TYPICAL RDS(on) (N-Channel) = 0.045 Ω TYPICAL RDS(on) (P-Channel) = 0.100 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFA |
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STMicroelectronics |
Memory module temperature sensor ■ STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kbit Serial Presence Detect (SPD) EEPROM Temperature sensor ■ ■ TDFN8 (DN)(a) 2 mm x 3 mm (max height 0.80 mm) Temperature sensor resolution: |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D S G G S OT -23 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor 0uA V DS = -32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -3.5A V GS =-4.5V, ID= -2A V DS = -5V, V GS = -10V V DS = -10V, ID =-3.5A Min Typ C Max Unit -40 -1 V uA 100 nA -1 -1.6 54 70 -20 8.7 660 -3 65 85 V m ohm m |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STS4DNF60 ■ ■ VDSS 60V RDS(on) <0.090Ω ID 4A Standard outline for easy automated surface mount assembly Low threshold drive SO-8 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” stri |
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STMicroelectronics |
Sensitive gate 4A SCRs On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the devic |
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STMicroelectronics |
Sensitive gate 4A SCRs On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the devic |
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STMicroelectronics |
Sensitive gate 4A SCRs On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the devic |
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STMicroelectronics |
High performance class G stereo headphone amplifier ■ Power supply range: 2.3 V to 4.8 V TS4621BEIJT - flip-chip ■ 0.6 mA/channel quiescent current ■ 2.1 mA current consumption with )100 µW/channel (10 dB crest factor) t(s ■ 0.006% typical THD+N at 1 kHz uc ■ 100 dB typical PSRR at 217 Hz d ■ 100 dB o |
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STMicroelectronics |
2.5V micropower shunt voltage reference ■ 2.5V output voltage ■ Ultra low current consumption: 40µA typ. ■ High precision @ 25°C: ±2% and ±1% ■ High stability when used with capacitive loads ■ Industrial temperature range:-40°C to +85°C ■ 150ppm/°C maximum temperature coefficient Applicati |
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STMicroelectronics |
OUTPUT RAIL TO RAIL 1W AUDIO POWER AMPLIFIER WITH STANDBY MODE le phones and to minimize the number of external components. The unity-gain stable amplifier can be configured by external gain setting resistors. APPLICATIONS Bypass VIN+ VIN- TS4871IQT - DFN8 STANDBY BYPASS VIN+ VIN- 1 2 3 4 8 7 6 5 VOUT 2 GN |
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STMicroelectronics |
1W AUDIO POWER AMPLIFIER |
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ST Microelectronics |
N-CHANNEL POWER MOSFET ulsed) Total Dissipation at TC = 25°C Value 100 100 ± 20 4 2.5 16 2.5 Unit V V V A A A W ( •) Pulse width limited by safe operating area. July 2001 . 1/8 STS4NF100 THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operati |
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ST Microelectronics |
P-CHANNEL POWER MOSFET urrent Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz tp = 100 µs |
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Desde 2024. D4U Semiconductor.
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