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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS =0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.5A V |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-S |
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STMicroelectronics |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS 0µA/amp. : TS27M2 (low power) q ICC= 1mA/amp. : TS272 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature ( |
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STMicroelectronics |
HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS 4 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2). October 1997 PIN CONNECTIONS (top vi |
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STMicroelectronics |
2.3 V memory module temperature sensor ■ STTS2002 is a 2.3 V memory module temperature sensor with 2 Kb SPD EEPROM forward compatible with JEDEC standard TSE 2002a2 and backward compatible with STTS424E02 Operating temperature range: – –40 °C to +125 °C Single supply voltage: 2.3 V to 3. |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor eakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -4.0A V GS = -2.5V, ID = -2.0A V |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor t Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =4A V GS = 2.5V, ID =2A V DS = |
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SamHop Microelectronics |
N-Channel MOSFET Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V ,VDS = 0V V DS = V GS , ID |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -3.3A R DS(ON) (m Ω) Max 70 @ VGS=-4.5V 100 @ VGS=-2.5V S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS |
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STMicroelectronics |
Low-power CMOS dual operational amplifiers ■ Wide supply voltage range: 3 to 16 V ■ Ultra-low consumption: 150 µA/op typ ■ Output voltage swing to ground ■ Excellent phase margin on capacitive load ■ Gain bandwidth product: 1 MHz typ ■ Vio down to 2 mV max. (B version) Description The TS27x2 |
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STMicroelectronics |
Filter-free stereo 2 x 2.8W class D audio power amplifier • Operating range from VCC = 2.5 V to 5.5 V • Standby mode active low • Output power per channel: 1.35 W @ 5 V or 0.68 W @ 3.6 V into 8 Ω with 1 % THD+N max • Output power per channel: 2.2 W @ 5 V into 4 Ω with 1 % THD+N max • Four gains can be selec |
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STMicroelectronics |
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS ectedbetween pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplif |
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STMicroelectronics |
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS ectedbetween pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplif |
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STMicroelectronics |
CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER t values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). ORDER CODE Package Par |
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STMicroelectronics |
CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER t values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). ORDER CODE Package Par |
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STMicroelectronics |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS 0µA/amp. : TS27M2 (low power) q ICC= 1mA/amp. : TS272 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature ( |
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STMicroelectronics |
HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS 4 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2). October 1997 PIN CONNECTIONS (top vi |
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STMicroelectronics |
HIGH SPEED CMOS QUAD OPERATIONAL AMPLIFIERS 4 (high speed) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2). October 1997 PIN CONNECTIONS (top vi |
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STMicroelectronics |
PRECISION VERY LOW POWER CMOS DUAL OPERATIONAL AMPLIFIERS rsus JFET devices is the very low input currents drift with temperature (see figure 2). ORDER CODE Package Part Number Temperature Range N TS27L2C/AC/BC 0°C, +70°C TS27L2I/AI/BI -40°C, +125°C TS27L2M/AM/BM -55°C, +125°C Example : TS27L2ACN • • • D • |
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STMicroelectronics |
PRECISION VERY LOW POWER CMOS DUAL OPERATIONAL AMPLIFIERS rsus JFET devices is the very low input currents drift with temperature (see figure 2). ORDER CODE Package Part Number Temperature Range N TS27L2C/AC/BC 0°C, +70°C TS27L2I/AI/BI -40°C, +125°C TS27L2M/AM/BM -55°C, +125°C Example : TS27L2ACN • • • D • |
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Desde 2024. D4U Semiconductor.
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