ST Microelectronics TN1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	STN1NK80Z	STMicroelectronics	N-channel Power MOSFET Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 16 Ω ID 250 mA Applications • Switching applications Description These high-voltage
2	TN1610H-6FP	STMicroelectronics	High temperature 16A 600V TO220FP thyristor SCRs • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 1000V/µs up to 150 °C • Gate triggering current IGT = 10 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK®2 compliant • Complie
3	TN1205H	STMicroelectronics	High temperature 12A SCRs ■ High junction temperature: Tj = 150 °C ■ Medium current SCRs ■ High noise immunity up to 150 °C ■ RoHS (2002/95/EC) compliant ■ 600 V VDRM, VRRM Application ■ General purpose AC line load switching ■ Motor control circuits ■ Small home appliances ■
4	TN1625	STMicroelectronics	16A standard SCR ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Description The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capab
5	TN1258	STMicroelectronics	An innovative high power-IC ble TO-220" developed by STMicroelectronics in late 70s. Data presented here demonstrates that PowerSO-20 is the real successor of Multiwatt for surface mount applications and becomes a milestone in power package technology with PowerSO-36 as Multiwa
6	TN16	STMicroelectronics	16A SCRs ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Description The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capab
7	TN1215-800H	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
8	TN1215-600B	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
9	2STN1360	ST Microelectronics	(2STF1360 / 2STN1360) LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description This device is an NPN transistor manufactured using new l
10	STN1NK60Z	STMicroelectronics	N-CHANNEL MOSFET 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W • 100% avalanche tested • Extremely high dv/dt capability •
11	2STN1550	STMicroelectronics	Low voltage fast-switching NPN power bipolar transistors ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting devices in medium power SOT-89 and SOT-223 packages In compliance with the 2002/93/EC European Directive 2 2 3 ■ 1 SOT-8
12	N1HNK60	STMicroelectronics	STN1HNK60 TYPE VDSS RDS(on) ID Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 600 V 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W ■ TYPICAL RDS(on) = 8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILIT
13	TN1625-600G	STMicroelectronics	16A standard SCR ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Description The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capab
14	TN1605H-8G	STMicroelectronics	high temperature SCR thyristor • High junction temperature: Tjmax. = 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free
15	TN1215-600H	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
16	TN1215-600G	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
17	TN1215-800G-TR	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
18	TN1215-800B-TR	STMicroelectronics	Standard 12A SCRs  On-state RMS current, IT(RMS) 12 A  Repetitive peak off-state voltage, VDRM and VRRM 600 V, 800 V and 1000 V  Triggering gate current, IGT 5 mA or 15 mA Description The standard 12 A SCR series is suitable to fit all modes of control, found in ap
19	TN1605H-6T	STMicroelectronics	High temperature 16A SCRs  High junction temperature: Tj = 150 °C  Gate triggering current IGT = 6 mA  High noise immunity dV/dt = 200 V/μs up to 150 °C  Blocking voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt: 100 A/μs  ECOPACK®2 compliant component Applic
20	TN1605H-6G	STMicroelectronics	High temperature 16A SCRs  High junction temperature: Tj = 150 °C  Gate triggering current IGT = 6 mA  High noise immunity dV/dt = 200 V/μs up to 150 °C  Blocking voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt: 100 A/μs  ECOPACK®2 compliant component Applica