| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
N-channel MOSFET Order code STL110NS3LLH7 VDS 30 V RDS(on) max ID 0.0034 Ω 120 A • Very low on-resistance • Very low Qg • High avalanche ruggedness • Embedded Schottky diode Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, |
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STMicroelectronics |
N-channel Power MOSFET Order code STL12HN65M2 VDS 650 V RDS(on) max. ID 0.55 Ω 6A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ ■ ■ ■ TAB High voltage capability Low spread of dynamic parameters Very high switching speed Large RBSOA Integrated antiparallel collector-emitter diode 1 3 2 1 3 2 TO-220 TAB TO-220FP Applications ■ ■ Electronic ballast for fluorescent lig |
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STMicroelectronics |
N-channel Power MOSFET 1234 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% aval |
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STMicroelectronics |
N-channel Power MOSFET Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Lo |
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STMicroelectronics |
N-channel Power MOSFET Order code V DS RDS(on) max STL160N4F7 40 V 2.5 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5 Applications • S |
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STMicroelectronics |
Automotive N-channel Power MOSFET Order code VDS RDS(on) max. 4 3 2 1 PowerFLAT 5x6 STL165N10F8AG • AEC-Q101 qualified • MSL1 grade 100 V 3.2 mΩ D(5, 6, 7, 8) 8765 • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg • Wettable flank |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 12 A 8 76 5 Applications • Switching appli |
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ST Microelectronics |
N-Channel Power MOSFET Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switc |
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STMicroelectronics |
N-channel Power MOSFET PowerFLAT 5x6 Order code VDS RDS(on) max. STL120N8F7 80 V 4.8 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 120 A PTOT 140 W D(5, 6, 7, 8 |
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STMicroelectronics |
N-channel Power MOSFET 1 2 3 4 PowerFLAT™5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 Order code STL160NS3LLH7 VDS 30 V RDS(on) max ID 0.0021 Ω 160 A • Very low on-resistance • Very low Qg • High avalanche ruggedness • Embedded Schottky diode Appl |
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STMicroelectronics |
N-channel Power MOSFET Order code VDSS RDS(on) max ID STL16N1VH5 12 V 0.003 Ω 16 A (1) t(s)1. The value is rated according Rthj-pcb c ■ Improved die-to-footprint ratio u ■ Very low profile package (1mm max) rod ■ Very low thermal resistance P ■ Very low gate charge te |
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STMicroelectronics |
N-channel Power MOSFET Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is an N-channel Power |
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STMicroelectronics |
N-Channel Power MOSFET PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8 |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL13N60DM2 VDS 600 V RDS(on) max. 0.370 Ω ID 8A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Fast-recovery body diode Extremely low gate charge and input |
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ST Microelectronics |
13 A PowerFLAT (8x8) HV ultra low gate charge MDmesh V Power MOSFET Type STL18N55M5 VDSS @ TJmax 600 V RDS(on) max < 0.240 Ω ID 13 A (1) ' $ 3 3 3 "OTTOM VIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER |
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ST Microelectronics |
Power MOSFETs N-channel 30V Type STL100N3LLH7 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness PowerFLAT™ ( 5x6 ) Application ■ Switching |
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STMicroelectronics |
N-channel Power MOSFET 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL100N10F7 VDSS RDS(on) max ID PTOT 100 V 0.0073 Ω 19 A 5 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching a |
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STMicroelectronics |
N-channel Power MOSFET Order code STL16N60M2 VDS @ TJmax 650 V RDS(on) max. 0.355 Ω ID 8A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device i |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STL120N4LF6AG 40 V RDS(on) max. 3.6 mΩ ID PTOT 120 A 96 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wet |
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Desde 2024. D4U Semiconductor.
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