No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
STL26NM60N Order code STL26NM60N VDSS @ TJmax 650 V RDS(on) max < 0.185 Ω ID 19 A (1) ' $ 3 3 3 "OTTOM VIEW 1. The value is rated according to Rthj-case ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance |
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STMicroelectronics |
N-channel Power MOSFET Order code STL300N4LF8 VDS 40 V RDS(on) max. 1.0 mΩ ID 304 A PowerFLAT 5x6 • MSL1 grade • 175 °C maximum operating junction temperature • 100% avalanche tested • Low gate charge Qg D(5, 6, 7, 8) Applications 8 76 5 • Industrial tools, motor |
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STMicroelectronics |
N-channel MOSFET Order code STL110NS3LLH7 VDS 30 V RDS(on) max ID 0.0034 Ω 120 A • Very low on-resistance • Very low Qg • High avalanche ruggedness • Embedded Schottky diode Applications • Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, |
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ST Microelectronics |
N-CHANNEL Power MOSFET OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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ST Microelectronics |
Single chip 802.11b/g/a WLAN radio summary ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Extremely small footprint Low power consumption High performance dual band solution,operating at 2.4 GHz and at 5 GHz Fully compliant with the IEEE 802.11b ,802.11g and 802.11a WLAN standards Support for 54, 48, 36, 24, |
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ST Microelectronics |
3.3V PROGRAMMABLE LVDS TRANSMITTER 24-BIT FLAT PANEL DISPLAY (FPD) LINK-85MHZ frequency of 85 MHz, 24 bits of RGB data and 3 bits of LCD timing and control data (FPLINE, FPFRAME, DRDY) are transmitted at a rate of 595 Mbps per LVDS data channel. Using a 85 MHz clock, the data throughput is 297.5 Mbytes/sec. The transmitter ca |
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ST Microelectronics |
2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE cal CEPT Transmission link at 2048Kb/s. Furthermore, thanks to its flexibility, it is the optimum solution also for the ISDN application as PRIMARY RATE CONTROLLER. The receive circuit performances exceed CCITT recommendation and the line driver outp |
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STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR -Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 700 400 9 0.6 1.5 0.4 0.75 0.95 -65 to |
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STMicroelectronics |
N-channel Power MOSFET Order code VDSS STL70N10F3 100 V RDS(on) max @VGS=10V 0.0084 Ω ID PTOT 16 A 136 W ■ Improved die-to-footprint ratio ■ Very low thermal resistance ■ Low on-resistance Applications ■ Switching applications Description This device is an N-channel |
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STMicroelectronics |
N-CHANNEL LOW THRESHOLD POWER MOS TRANSISTORS W/oC -65 to 150 °C 150 °C 1/3 617 STLT30 - STLT29 THERMAL DATA Rthj _ case Thermal resistance junction-case max Rthj _ amb Thermal resistance junction-ambient ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified) Paramete |
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ST Microelectronics |
QUAD FEEDER POWER SUPPLY is available. DIP24 PLCC44 ORDERING NUMBERS: STLC5444B1 (DIP24) STLC5444FN (PLCC44) DIP24 PIN CONNECTION (Top view) D1 D0 INT BGND VCC ILIM N.C. VBB N.C. S0 S1 VBB 1 2 3 4 5 6 7 8 9 10 11 12 D94TL102 24 23 22 21 20 19 18 17 16 15 14 13 D2 D3 |
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ST Microelectronics |
Power MOSFETs Type STL25N15F3 VDSS 150 V RDS(on) max < 0.057 Ω ID 6 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ Improved die-to-footprint ratio Very low profile package (1mm max) Very low thermal resistance Low on-resistance PowerFLAT™(6x5) Applicati |
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STMicroelectronics |
700MHz 64-bit superscalar MIPS based microprocessor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64 bit superscalar architecture 700MHz clock frequency (typical conditions) Single/double precision floating-point units New Streaming Multimedia instruction set support (SIMD) 64KB instruction cache, 64KB data cache, onchip 51 |
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STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 700 400 9 1 2 0.5 1 1 -65 t |
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STMicroelectronics |
N-channel Power MOSFET Type STL75NH3LL VDSS 30V RDS(on) max ID < 0.0057 Ω 20 A (1) 1. This value is according Rthj-pcb ■ ■ ■ ■ ■ Improved die-to-footprint ratio Very low profile package (1mm max) Very low thermal resistance Very low gate charge Low threshold device Powe |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ ■ ■ ■ ■ TAB High voltage capability Low spread of dynamic parameters Very high switching speed Large RBSOA Integrated antiparallel collector-emitter diode 1 3 2 1 3 2 TO-220 TAB TO-220FP Applications ■ ■ Electronic ballast for fluorescent lig |
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STMicroelectronics |
N-channel Power MOSFET 1234 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% aval |
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STMicroelectronics |
N-channel Power MOSFET imum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) (1) Drain current (pulsed) ID (3) Drain current (conti |
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STMicroelectronics |
N-channel Power MOSFET Order code STL20DNF06LAG VDS 60 V RDS(on) max. 40 mΩ ID 20 A PTOT 75 W Designed for Automotive applications and AEC-Q101 qualified PowerFLAT™ 5x6 double island with wettable flanks Logic level VGS(th) Maximum junction temperature: TJ = 1 |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STL20NF06LAG 60 V 40 mΩ 20 A 75 W Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Designed for Automotive applications and AEC-Q101 qualified PowerFLAT™ 5x6 |
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