| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
Battery monitor ■ 0.5% accuracy battery voltage monitoring ■ Low battery alarm output with programmable thresholds ■ Low power: 60 µA in power-saving mode, 2 µA max in standby mode ■ Ideal for implementation of robust gas gauge systems using open-circuit voltage and |
|
|
|
|
STMicroelectronics |
STC03DE170HP VCS(ON) IC RCS(ON) 1 V 3 A 0.33 Ω ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700V ■ Very low CISS driven by RG = 47 Ω Applications ■ Aux SMPS for three phase mains Description The STC03DE170HP is manufac |
|
|
|
|
ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off c |
|
|
|
|
ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.8 V ■ PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off c |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s) ■ Typical ft = 20 MHz c ■ Fully characterized at 125 oC roduApplications P ■ Audio power amplifier leteDescription soThe device is a NPN transistor manufact |
|
|
|
|
STMicroelectronics |
Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low |
|
|
|
|
ST Microelectronics |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR Table 1. VCS(ON) 0.6V ■ ■ ■ ■ ■ General features IC 8A RCS(ON) 0.075Ω Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1500 V Very low CISS driven by RG = 47 Ω In compliance with the 2002/93/EC European Directive 1 |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactur |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transist |
|
|
|
|
STMicroelectronics |
Multi-channel clock distribution circuit ■ ■ ■ ■ ■ ■ ■ ■ ■ 2, 3 or 4 outputs buffered clock distribution Single-ended sine wave or square wave clock input and output Individual clock enable for each output Lower fan-out on clock source No AC coupling capacitor needed at the input Ultra-low |
|
|
|
|
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor ain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2A V GS = 2.5V, ID= |
|
|
|
|
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S mini 8 PIN 1 D2 5 D2 6 D1 7 D1 8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Vo |
|
|
|
|
ST Microelectronics |
HOME APPLIANCE CONTROL CIRCUIT ■ Wide range input supply voltage operation: 7 to 18V ■ 5 V +/- 5% full tolerance voltage regulator and 50mA output current DIP-20 ■ MCU reset circuit with activation delay time and hysteresis (3.75V Hi, 3.4V Lo) Table 1. Order Code ■ 30µs digitally |
|
|
|
|
ST Microelectronics |
High speed dual differential line receivers summary s SUB-Low voltage differential signaling inputs: VID = 100mV with RT = 100Ω, CL =10pF High signaling rate: fIN = 416MHz max (D+,D-, CLK+, CLK-) fOUT = 52MHz max (D1-D8, CLK) Very high speed: tpLH~tpHL=3.5ns (typ) at VDD=2.8V; VL=1.8V Operati |
|
|
|
|
ST Microelectronics |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR VCS(ON) 0.5 V n Figure 1: Package RCS(ON) 0.01 W IC 5A n n n n HIGH VOLTAGE / LOW CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W 1 2 3 4 A |
|
|
|
|
ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.8 V ■ IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO247-4 |
|
|
|
|
ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.8 V ■ IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time ■ ■ ■ |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar T |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactur |
|
|
|
|
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured us |
|
Desde 2024. D4U Semiconductor.
|