| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 − 65 to +150 V V V A W °C °C |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS VHF APPLICATIONS °C/W 1/6 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance June 20, 1994 0.65 SD1480 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE DYNAMIC Symbol I C = 1 |
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STMicroelectronics |
RF & MICROWAVE TRANSISTORS CIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50mA IC = 100mA IC = 50mA IE = 10mA VCE = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 36 36 18 3.5 — |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS itter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 875 +200 − 65 to +150 V V V A W °C °C THE |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO ICES hFE IC = 15 mA IC = 50 mA IE = 5 mA VCE = 12.5 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 A 36 16 4.0 — 20 — — — — — — — — 5 300 V V V mA — DYNAMI |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS 0 25 3.5 0.5 20.6 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 8.5 °C/W 1/3 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1855 (TCC20L25) ELECTRICAL SPECIFI |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS HERMAL DATA DataSheet4U.com RTH(j-c) July 1993 Junction-Case Thermal Resistance 6.0 °C/W 1/4 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1897 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ |
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STMicroelectronics |
RF POWER BIPOLAR TRANSISTORS SUMMARY Figure 1. Package ■ 175 MHz ■ 12.5 VOLTS ■ COMMON EMITTER ) ■ POUT = 100 W MIN. WITH 6.0 dB GAIN duct(sDESCRIPTION roThe SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF PFM communications. Thi |
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Silan Microelectronics |
16-BIT CONSTANT CURRENT LED DRIVER * Output current adjustable through external resistor * Data serial-in/serial-out * 16-channel constant current output * Output current: 1~45mA * 30MHz clock frequency * Fast output current response, ENABLE min. width:30ns * Current Precision |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS Temperature 65 65 3.5 43.2 1167 +200 − 65 to +200 V V V A W °C °C THERMAL DATA RTH(j-c) July 19, 1994 Junction-Case Thermal Resistance 0.15 °C/W 1/6 SD1565 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Ty |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS lector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 40 1350 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.06 |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS Emitter 4. Base VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 40 1350 +200 − 65 to +200 V V V A W °C °C |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS C PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Ca |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.12 °C/W 1/4 SD1541-09 EL |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS ase 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 5.5 218.7 +200 − 65 to +150 V V V A W °C °C |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS BO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 5.5 218.7 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS ons Value Min. Typ. Max. Unit BVCES BVCEO BVEBO hFE IC = 100mA IC = 200mA IE = 10mA VCE = 6V VBE = 0V IB = 0mA IC = 0mA IC = 1.4A 110 55 4.0 19 — — — — — — — 50 V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT G P* IMD* |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 2.5 °C/W 1/6 SD1732 (TDS595) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 20mA IC = 40mA IE |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 2 °C/W °C/W SD1731-14 (ST448) ELECTRICAL SPECIFICATIONS STATIC (Tcase = 25°C) S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICEO ICES hFE IC = 2 00 mA IC = 2 00 mA IE = 2 0 mA VC E = 30 V VC E = 55 V VC E = 6 |
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Desde 2024. D4U Semiconductor.
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