ST Microelectronics S20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SFR12S20F	Silan Microelectronics	200V SUPER-FAST RECOVERY RECTIFIER ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 175 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR12S20T SFR12S20F Package TO-220-3L TO-220F-3L Marking SFR12S20T SFR1
2	STPS20S100CT	STMicroelectronics	POWER SCHOTTKY RECTIFIER AND BENEFITS ■ ■ ■ ■ 2 x 10 A 100 V 175°C 0.71 V A1 K A2 High junction temperature capability for converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier
3	STPS20H100CF	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER AND BENEFITS n 2 x 10 A 100 V 175°C 0.64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAG
4	SFR16S20T	Silan Microelectronics	200V SUPER-FAST RECOVERY RECTIFIER ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 175 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR16S20T SFR16S20F Package TO-220-3L TO-220F-3L Marking SFR16S20T SFR1
5	STPS20H100CR	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
6	AVS20	STMicroelectronics	AUTOMATIC VOLTAGE SWITCH SMPS < 300W ntrol remains locked to the 230V mode and avoids any high voltage spike when the voltage is restored to 230V. When connected to VDD, the mode input desactivates this option “this is the follower option”. • The TRIAC is specially designed for this app
7	STM8S208R6	STMicroelectronics	24 MHz STM8S 8-bit MCU  Core – Max fCPU: up to 24 MHz, 0 wait states @ fCPU 16 MHz – Advanced STM8 core with Harvard architecture and 3-stage pipeline – Extended instruction set – Max 20 MIPS @ 24 MHz  Memories – Program: up to 128 Kbytes Flash; data retention 20 year
8	STPS200170TV1	STMicroelectronics	High voltage power Schottky rectifier and benefits ■ ■ ■ ■ ■ Negligible switching losses Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop Insulated package – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF A2 K2 A1 K1 ISOT
9	SFR20S20T	Silan Microelectronics	200V SUPER-FAST RECOVERY RECTIFIER ∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 175 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR20S20T SFR20S20F Package TO-220-3L TO-220F-3L Marking SFR20S20T SFR2
10	STPS2045CT	ST Microelectronics	POWER SCHOTTKY RECTIFIER  Very small conduction losses  Negligible switching losses  Extremely fast switching  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  Avalanche rated  ECOPACK®2 compliant component for D²PAK on demand Power Schottky rectif
11	GS20AC-12-1	STMicroelectronics	20 WATT AC-DC CONVERTER 6 (1.42) 92 (3.62) 2 (0.07) 3 (0.12) 77 (3.03) 20 (0.79) 5 (0.20) 18 (0.71) 15 (0.59) 52.5 (2.07) 6 (0.24) 1 (0.04) 90 (3.54) 8.5 (0.33) 8 (0.31) 18.5 (0.73) 4 (0.16) 7 (0.28) 2 Wires: 8.8 (0.35) 4 (0.16) 18.5 (0.73) 34 (1.34) + Vout RE
12	BAS20W	Sangdest Microelectronics	SURFACE MOUNT FAST SWITCHING DIODE  High Conductance  Fast Switching  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose and Switching  Plastic Material –UL Recognition Flammability Classification 94V-O  This is a Pb − Free Device  All SMC parts a
13	STPS20H100	ST Microelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER AND BENEFITS n 2 x 10 A 100 V 175°C 0.64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAG
14	LIS202DL	STMicroelectronics	MEMS motion sensor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2.16V to 3.6V supply voltage 1.8V compatible IOs <1mW power consumption ±2g/±8g dynamically selectable Full-Scale I2C/SPI digital output interface Programmable interrupt generator Click and double click recognition Embedded hig
15	STPS20120C	STMicroelectronics	power Schottky rectifier  High junction temperature capability  Good trade-off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPACK®2 compliant component for DPAK on demand November 2016 This is information on a
16	STPS20H100CT	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
17	STPS20H100CG	STMicroelectronics	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER • Negligible switching losses • High junction temperature capability • Low leakage current • Good trade off between leakage current and forward voltage drop • Avalanche rated • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECO
18	SCTHS200N120G3AG	STMicroelectronics	Automotive-grade silicon carbide Power MOSFET Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very hig
19	BAS20	Sangdest Microelectronics	SWITCHING DIODE  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  High Conductance  This is a Pb - Free Device  All SMC parts are traceable to the wafer lot  Additional testing can
20	STM8S207S6	STMicroelectronics	24 MHz STM8S 8-bit MCU  Core – Max fCPU: up to 24 MHz, 0 wait states @ fCPU 16 MHz – Advanced STM8 core with Harvard architecture and 3-stage pipeline – Extended instruction set – Max 20 MIPS @ 24 MHz  Memories – Program: up to 128 Kbytes Flash; data retention 20 year