| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ature November 2002 Value 400 700 9 12 25 6 12 18 36 110 -65 to 150 150 Unit V V V A A A A A A W oC oC 1/6 MJE13009 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.14 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherw |
|
|
|
|
ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V |
|
|
|
|
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
|
|
|
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IB = 0) VCE = 30 V ICEX Collector Cut-off Current (VBE = 1.5V) VCE = 70 V Tcase = 150oC ICBO Collector Cut-off Current (IE = 0) VCBO = 7 |
|
|
|
|
ST Microelectronics |
COMPLEMETARY SILICON POWER TRANSISTORS ■ STMicroelectronics preferred salestypes ■ Complementary NPN - PNP devices Applications ■ Linear and switching industrial equipment Description The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching appli |
|
|
|
|
ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR RICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC I |
|
|
|
|
ST Microelectronics |
Low voltage high speed switching NPN transistor ■ High speed switching ■ NPN device t(s)Applications c ■ Audio amplifier u ■ High speed switching applications ProdDescription teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 pl |
|
|
|
|
ST Microelectronics |
SILICON PNP TRANSISTOR |
|
|
|
|
ST Microelectronics |
SILICON NPN TRANSISTOR B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain Small Signal Current Gain Transistor Frequency Collector-Base Capacitance Test Cond ition s V CB = 250 |
|
|
|
|
ST Microelectronics |
COMPLEMETARY SILICON POWER TRANSISTORS ■ STMicroelectronics preferred salestypes ■ Complementary NPN - PNP devices Applications ■ Linear and switching industrial equipment Description The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching appli |
|
|
|
|
ST Microelectronics |
SILICON NPN TRANSISTOR |
|
|
|
|
ST Microelectronics |
HIGH VOLTAGE PNP POWER TRANSISTOR mperature 80 -65 to 150 150 W oC oC September 2003 1/4 MJE5852 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 1.56 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless |
|
|
|
|
ST Microelectronics |
NPN power Darlington transistor . ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with )integrated antiparallel collector-emitter diode ct(sApplication du ■ Linear and switching industrial equipment ProDescription leteThe device is manufactured in p |
|
|
|
|
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IB = 0) VCE = 30 V ICEX Collector Cut-off Current (VBE = 1.5V) VCE = 70 V Tcase = 150oC ICBO Collector Cut-off Current (IE = 0) VCBO = 7 |
|
|
|
|
ST Microelectronics |
Low voltage high speed switching NPN transistor ■ High speed switching ■ NPN device t(s)Applications c ■ Audio amplifier u ■ High speed switching applications ProdDescription teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 pl |
|
|
|
|
ST Microelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
|
|
|
ST Microelectronics |
SILICON NPN POWER DARLINGTON TRANSISTORS ameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CB = rated V CBO T case = 100 o C V CE = rated V CEO V EB = 5 V I C = 50 mA IC = 4 A I C = 1.5 A IC |
|
Desde 2024. D4U Semiconductor.
|