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ST Microelectronics |
High voltage NPN Power transistor ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully insulated power package U.L. c |
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ST Microelectronics |
MD2001FX ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirements Tight hFE range at operating collector current Fully insulated power package U.L |
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STMicroelectronics |
High voltage NPN power transistor ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL |
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ST Microelectronics |
High voltage NPN power transistor ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
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ST Microelectronics |
High voltage NPN Power transistor ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” More stable performances versus operating temperature variation Low base-drive requirements Tighter hFE range at operating collector current Fully insulated power pack |
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ST Microelectronics |
High voltage NPN Power transistor ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” More stable performances versus operating temperature variation Low base-drive requirements Tighter hFE range at operating collector current Fully insulated power pack |
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ST Microelectronics |
High Voltage NPN Power Transistor ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
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ST Microelectronics |
High voltage NPN Power transistor ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
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STMicroelectronics |
2.5 A bipolar stepper motor drive module ■ ■ ■ ■ ■ ■ ■ ■ Wide supply voltage range Full/Half step drive capability Logic signals TTL/CMOS compatible Programmable motor phase current and chopper frequency Selectable Slow/Fast current decay Synchronization for multimotor applications Remote |
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ST Microelectronics |
Integrated motor drive ■ ■ ■ Advanced brushless motor control in a single module easy to piggyback to the motor Extremely compact dimensions: 165x60x26 mm, <0.5 kg weight Up to 2 kW power with 800 Vdc supply, on 100°C motor surface, can withstand peak current of 40 A in a |
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Desde 2024. D4U Semiconductor.
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