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STMicroelectronics |
M45PE80 SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single |
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STMicroelectronics |
Field effect rectifier • Advanced rectifier proprietary process • Stable leakage current over reverse voltage • Reduce leakage current • Low forward voltage drop • High frequency operation July 2014 This is information on a product in full production. DocID023771 Rev 3 |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
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ST Microelectronics |
Page-Erasable Serial Flash Memory ■ ■ ■ ■ SPI bus compatible serial interface 50 MHz clock rate (maximum) 16 Mbit of Page-Erasable Flash memory Page of 256 Bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) Sector Erase (512 Kbit |
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STMicroelectronics |
Page-Erasable Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single |
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SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24 |
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SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor ¸¿²²»´ Û ÔÛ ÝÌÎ ×ÝßÔ ÝØßÎ ßÝÌÛ Î ×ÍÌ×ÝÍ øÌ ß ã îë Ý «²´»-- ±¬¸»®© ·-» ²±¬»¼÷ п®¿³»¬»® ÑÚÚ ÝØßÎ ßÝÌÛÎ ×Í Ì×ÝÍ Ü®¿ ·²óͱ«®½» Þ®»¿µ¼±©² ʱ´¬¿¹» Æ»®± Ù¿¬» ʱ´¬¿¹» Ü®¿ ·² Ý«®®»²¬ Ù¿¬»óÞ±¼§ Ô»¿µ¿¹» ÞÊ ÜÍ Í ×ÜÍÍ ×ÙÍÍ Ê ÙÍ ø¬¸÷ Î ÜÍ øÑÒ÷ ×ÜøÑÒ÷ ¹ÚÍ Ý ×Í Í Ý ÑÍ |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor (ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 5A V GS =4.5V, ID= 3A V DS = 10V, V GS = 10V V DS = 10V, ID = 5A Min Typ C Max Unit 55 1 V uA 100 nA |
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STMicroelectronics |
WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS of the MC1458 and, in addition possesses three times the unity gain bandwidth of the industry standard. ORDER CODE Part Number Temperature Range Package N D P N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) TJM4558C 0°C, +70°C TJM4558I -40°C |
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ST Microelectronics |
8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
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ST Microelectronics |
Page-Erasable Serial Flash Memory SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Sing |
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SHENZHEN STATE MICROELECTRONICS |
SM4558 ge 1 of 5 SHENZHEN STATE MICROELECTRONICS CO,.LTD SM4558 www.DataSheet4U.com ¹¦ÄÜ¿òͼ 1 8 2 A 7 3 B 6 4 5 ¹Ü½Å ÁÐͼ â ( ¶¥ÊÓ ) 1 OUT (1) Vcc+ 8 2 IN- (1) OUT (2) 7 3 IN+ (1) IN- (2) 6 4 Vcc- IN+ (2) 5 Òý³ö¶ËÐòºÅ 1 2 3 |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
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Desde 2024. D4U Semiconductor.
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