No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
MEMS pressure sensor Pressure sensor with water-resistant package 260 to 1260 hPa absolute pressure range Current consumption down to 3 μA High overpressure capability: 20x full scale Embedded temperature compensation 24-bit pressure data output 16-bit temp |
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STMicroelectronics |
MEMS nano pressure sensor 260 to 1260 hPa absolute pressure range Current consumption down to 3 μA High overpressure capability: 20x full-scale Embedded temperature compensation 24-bit pressure data output 16-bit temperature data output ODR from 1 Hz to 75 Hz |
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STMicroelectronics |
Low Energy wireless SoC • Bluetooth® Low Energy system-on-chip supporting Bluetooth 5.3 specifications – 2 Mbps data rate – Long range (Coded PHY) – Advertising extensions – Channel selection algorithm #2 – GATT caching – Direction finding (AoA/AoD) – LE ping procedure – Pe |
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STMicroelectronics |
High-performance MEMS nano pressure sensor 260 to 1260 hPa absolute pressure range Current consumption down to 4 μA Absolute pressure accuracy: 0.5 hPa Low pressure sensor noise: 0.65 Pa High-performance TCO: 0.65 Pa/°C Embedded temperature compensation 24-bit pressure data outp |
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ST Microelectronics |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM SUMMARY s CONVERT LOW POWER SRAMs INTO NVRAMs s s Figure 1. 16-pin SOIC Package 5V OR 3V OPERATING VOLTAGE PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE CHOICE OF SUPPLY VOLTAGES an |
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ST Microelectronics |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM SUMMARY s CONVERT LOW POWER SRAMs INTO NVRAMs s s Figure 1. 16-pin SOIC Package 5V OR 3V OPERATING VOLTAGE PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE CHOICE OF SUPPLY VOLTAGES an |
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ST Microelectronics |
NVRAM CONTROLLER for up to EIGHT LPSRAM 0Z300W VOUT BL E1CON E2CON E3CON E4CON RST DESCRIPTION The M40Z300/W NVRAM Controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC inpu |
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STMicroelectronics |
MEMS pressure sensor Pressure sensor with potted gel package 260 to 1260 hPa absolute pressure range Current consumption down to 3 μA High overpressure capability: 20x full scale Embedded temperature compensation 24-bit pressure data output 16-bit temperatu |
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STMicroelectronics |
Low-power and high-precision MEMS nano pressure sensor Product status link LPS22DF Product summary Order code LPS22DFTR Temperature range [°C] -40 to +85 Package HLGA-10L (2.0 x 2.0 x 0.73 mm) Packing Tape and reel Product resources AN5699 (device application note) TN0018 (design and soldering |
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ST Microelectronics |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM SUMMARY s CONVERT LOW POWER SRAMs INTO NVRAMs s s Figure 1. 16-pin SOIC Package 5V OR 3V OPERATING VOLTAGE PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE CHOICE OF SUPPLY VOLTAGES an |
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ST Microelectronics |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM SUMMARY s CONVERT LOW POWER SRAMs INTO NVRAMs s s Figure 1. 16-pin SOIC Package 5V OR 3V OPERATING VOLTAGE PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE CHOICE OF SUPPLY VOLTAGES an |
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ST Microelectronics |
5V or 3V NVRAM SUPERVISOR FOR LPSRAM SUMMARY s CONVERT LOW POWER SRAMs INTO NVRAMs s s Figure 1. 16-pin SOIC Package 5V OR 3V OPERATING VOLTAGE PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE CHOICE OF SUPPLY VOLTAGES an |
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ST Microelectronics |
NVRAM CONTROLLER for up to TWO LPSRAM |
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ST Microelectronics |
NVRAM CONTROLLER for up to TWO LPSRAM |
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ST Microelectronics |
NVRAM CONTROLLER for up to EIGHT LPSRAM 0Z300W VOUT BL E1CON E2CON E3CON E4CON RST DESCRIPTION The M40Z300/W NVRAM Controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC inpu |
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STMicroelectronics |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package summary ■ Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory – 512 Mbit (x16) SDR or DDR LPSDRAM Temperature range – -30 up to 85 °C Supply voltage – NAND Flash : VDDF = 1.7V to 1.95V – LPSDRAM: VD |
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STMicroelectronics |
MEMS pressure sensor Pressure sensor with water-resistant package Potting gel & grounded metal cap 260 to 1260 hPa absolute pressure range Current consumption down to 4 μA Absolute pressure accuracy: 0.5 hPa Low pressure sensor noise: 0.7 Pa Embedded temper |
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STMicroelectronics |
MEMS pressure sensor • Pressure sensor with potted gel package • 300 to 1200 hPa absolute pressure range • Current consumption down to 4 µA • High overpressure capability: 20x full scale • Embedded temperature compensation • 24-bit pressure data output • 16-bit temperatu |
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STMicroelectronics |
MEMS pressure sensor • Pressure sensor with water-resistant package • Potting gel and grounded metal cap • 260 to 1260 hPa absolute pressure range • Current consumption down to 4 µA • Absolute pressure accuracy: 0.5 hPa • Low pressure sensor noise: 0.7 Pa • Temperature a |
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ST Microelectronics |
MEMS Pressure Sensor ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Piezoresistive pressure sensor Very low power consumption 300 -1100 mbar absolute pressure range 0.1 mbar resolution Embedded offset and span temperature compensation Embedded 16-bit ADC SPI and I2C interfaces Supply voltage: |
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