ST Microelectronics L64 Hoja de datos

No.	parte #	Fabricante	Descripción
1	L6470	STMicroelectronics	Fully integrated microstepping motor driver  Operating voltage: 8 - 45 V  7.0 A out peak current (3.0 A r.m.s.)  Low RDS(on) Power MOSFETs  Programmable speed profile and positioning  Programmable power MOS slew rate  Up to 1/128 microstepping  Sensorless stall detection  SPI interface
2	L6460	ST Microelectronics	SPI Configurable Stepper And DC Multi Motor Driver ■ Operating supply voltage from 13 V to 38 V ■ 4 full bridge driver configurable in multi-motor application to drive: ) – 2 DC and 1 stepper motor t(s – 4 DC motor uc ■ Bridge 1 and 2 (RDSon = 0.60 Ω) can be d configured to work as: ro – Dual full
3	STL64N4F7AG	STMicroelectronics	Power MOSFET Order code VDS RDS(on) max. ID STL64N4F7AG 40 V 8.5 mΩ 64 A 4 3 2 1 • AEC-Q101 qualified PowerFLAT™ 5x6 • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) D(5, 6, 7, 8) 8 76 5 • Low Crss/Ciss ratio for EMI immun
4	L6474	STMicroelectronics	Fully integrated microstepping motor driver  Operating voltage: 8 - 45 V  7.0 A output peak current (3.0 A r.m.s.)  Low RDS(on) power MOSFETs  Programmable power MOS slew rate  Up to 1/16 microstepping  Current control with adaptive decay  Non-dissipative current sensing  SPI interface
5	L6480	STMicroelectronics	Microstepping motor controller  Operating voltage: 7.5 V - 85 V  Dual full bridge gate driver for N-channel MOSFETs  Fully programmable gate driving  Embedded Miller clamp function  Programmable speed profile  Up to 1/128 microstepping  Sensorless stall detection  Integrat
6	L6494	STMicroelectronics	High voltage high and low-side 2A gate driver  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF l
7	L6491	STMicroelectronics	High voltage high and low-side 4A gate driver • High voltage rail up to 600 V • dV/dt immunity ± 50 V/ns in full temperature range • Driver current capability: 4 A source/sink • Switching times 15 ns rise/fall with 1 nF load • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Integrated bootstrap dio
8	L6482	STMicroelectronics	Microstepping motor controller  Operating voltage: 7.5 V - 85 V  Dual full bridge gate driver for N-channel MOSFETs  Fully programmable gate driving  Embedded Miller clamp function  Programmable speed profile  Up to 1/16 microstepping  Advanced current control with auto-ada
9	L6472	STMicroelectronics	Fully integrated microstepping motor driver  Operating voltage: 8 - 45 V  7.0 A output peak current (3.0 A r.m.s.)  Low RDS(on) power MOSFETs  Programmable speed profile  Programmable power MOSFET slew rate  Up to 1/16 microstepping  Predictive current control with adaptive decay  Non
10	STL64DN4F7AG	STMicroelectronics	Automotive-grade dual N-channel Power MOSFET Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5 • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI
11	L6452	STMicroelectronics	Dual 13x16 Matrix Head Ink Jet Driver ■ DRIVES TWO 13X16 MATRIX HEADS ■ HEAD TEMPERATURE SENSING ■ POWER UP SYSTEM ■ ELECTRICAL NOZZLE CHECK ■ 8 BIT A/D ■ 5 BIT D/A ■ ± 4KV ESD PROTECTED OUTPUTS Description L6452 is a device designed to drive two 13x16 matrix ink jet print heads in prin
12	L6498	STMicroelectronics	High voltage high and low-side 2A gate driver  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF l