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ST Microelectronics |
N-CHANNEL MOS TRANSISTOR pation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 ± 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1.2 -65 to 150 15 |
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ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ge Temperature Max. Operating Junction Temperature o o Value STH6N100 1000 1000 ± 20 6 3.7 24 180 1.44 -65 to 150 150 3.7 2.3 24 70 0.56 4000 Unit V V V A A A W W/o C V o o C C ( •) Pulse width limited by safe operating area December 1996 1/1 |
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STMicroelectronics |
N-Channel MOSFET |
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ST Microelectronics |
STH6NA80FI lsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH6NA80F I 800 800 ± 30 V V V 3.4 2.1 22 60 0.48 4000 A A A W W /o C V o o 5.4 3.4 22 150 1 |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STH6N95K5-2 950 V 1.25 Ω 6 A 110 W Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applic |
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Desde 2024. D4U Semiconductor.
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