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ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off c |
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ST Microelectronics |
Emitter Switched Bipolar Transistor VCS(ON) 0.8 V ■ PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off c |
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ST Microelectronics |
EMI FILTER High common mode attenuation: -34 dB at 900 MHz -20 dB between 800 MHz and 2.2 GHz Large bandwidth: 1.7 GHz Very low PCB space consumption Thin package: 0.55 mm max. RoHS package High reduction of parasitic elements through integratio |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
EMI filter and line termination ■ Monolithic device with recommended line termination for USB downstream ports ■ Integrated Rt series termination and Ct bypassing capacitors. ■ Integrated ESD protection ■ Small package size Description The USB specification requires USB downstream |
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ST Microelectronics |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE VCS(ON) 1.3 V n Figure 1: Package RCS(ON) 0.026 W IC 50 A n n n n HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) ISOTOP APPLICATION n INDUS |
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ST Microelectronics |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR Table 1. VCS(ON) 0.6V ■ ■ ■ ■ ■ General features IC 8A RCS(ON) 0.075Ω Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 1500 V Very low CISS driven by RG = 47 Ω In compliance with the 2002/93/EC European Directive 1 |
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STMicroelectronics |
2 line EMI filter and ESD protection set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered |
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STMicroelectronics |
10-BIT WIDE EMI FILTER air discharge) (contact discharge) ESDresponseto IEC1000-4-2 (15 kVairdischarge) Filtering response (with 50Ω line) TM : ASD is trademark of STMicroelectronics. September 1998 - Ed: 2A 1/9 EMIF02-600FU7 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) S |
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STMicroelectronics |
EMI FILTER s Filter Input Output 6 4 5 BASIC CELL CONFIGURATION Low-pass Filter Input Output R = 200Ω C = 50pF max. TM : IPAD is a trademark of STMicroelectronics. December 2002 - Ed: 1A 1/4 EMIF04-2005QCF ABSOLUTE RATINGS (Tamb = 25°C) Symbol VPP Tj T |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.7 |
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ST Microelectronics |
EMI FILTER INCLUDING ESD PROTECTION rder Code Part Number EMIF010-COM01C1 Marking FE Figure 1: Pin Configuration (Ball side) E I5 D I4 C I3 B I2 A I1 1 2 3 4 5 I10 I9 I8 I7 I6 GND GND GND GND GND 010 09 08 07 06 05 04 03 02 01 Figure 2: Basic cell configurat |
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ST Microelectronics |
3 LINES EMI FILTER INCLUDING ESD PROTECTION monolithic integration ■ High reducing of parasitic elements through RST RST A out in integration & wafer level packaging. COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 15kV (air discharge) 8kV (contact discharge) MIL STD 883E - Method |
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ST Microelectronics |
(SGSF321 / SGSF421) Fast Switch Hollow Emitter NPN Transistors |
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ST Microelectronics |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR VCS(ON) 0.5 V n Figure 1: Package RCS(ON) 0.01 W IC 5A n n n n HIGH VOLTAGE / LOW CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 W 1 2 3 4 A |
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ST Microelectronics |
6 LINES LOW CAPACITANCE EMI FILTER AND ESD PROTECTION uts pins (IEC61000-4-2 level 4) ■ High reliability offered by monolithic integration ■ High reducing of parasitic elements through integration & wafer level packaging COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 on input pins 15kV (air |
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ST Microelectronics |
4 LINES EMI FILTER INCLUDING ESD PROTECTION DARDS : IEC 61000-4-2 Level 4: 15kV 8 kV (air discharge) (contact discharge) on input & output pins. MIL STD 883E - Method 3015-6 Class 3 TM : IPAD is a trademark of STMicroelectronics. September 2002 - Ed: 4A 1/6 EMIF04-MMC02F1 SCHEMATIC R10 R2 |
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ST Microelectronics |
4 LINES EMI ILTER AND ESD PROTECTION rasitic elements through integration and wafer level packaging. COMPLIES WITH THE FOLLOWING STANDARDS: IEC 61000-4-2 level 4: 15kV (air discharge) 8kV (contact discharge) MIL STD 883E - Method 3015-6 Class 3: 30kV ® Flip-Chip (15 Bumps) Table 1: O |
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ST Microelectronics |
4 LINES LOW CAPACITANCE EMI FILTER AND ESD PROTECTION uts pins (IEC61000-4-2 level 4) ■ High reliability offered by monolithic integration ■ High reducing of parasitic elements through integration & wafer level packaging ■ Reduce compnents counts and BOM COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4 |
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Desde 2024. D4U Semiconductor.
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