ST Microelectronics DB- Hoja de datos

No.	parte #	Fabricante	Descripción
1	P0102DB	ST Microelectronics	SENSITIVE GATE SCR
2	TS904	ST Microelectronics	RAIL TO RAIL CMOS QUAD OPERATIONAL AMPLIFIER WITH STANDBY POSITION : TS902. April 1999 TS904I/AI PIN CONNECTIONS (top view) Output 1 Inverting Input 1 Non-inve rting input 1 V CC + Non-inve rting Input 2 Inve rting Input 2 Output 2 S tandby 1 1 2 3 4 5 6 7 8 16 Output 4 Inverting Input 4 Non-inverting input 4
3	STW5200	STMicroelectronics	103 dB SNR audio DAC ■ DAC www.DataSheet4U.com – 24-bit audio DAC – 103 dB dynamic range – Asynchronous DAC path with 8 to 48kHz sampling rate Supply – Direct connection to the battery thanks to integrated power management Inputs – I2S digital input Analog output driver
4	TDB0156	ST Microelectronics	Low Power Dual Bi-FET Operational Amplifiers
5	DB151S	Sangdest Microelectronics	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERS  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Designed for surface mount application  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts ar
6	TDB0555DP	ST Microelectronics	Timer
7	SDB60N03L	SamHop Microelectronics	N-Channel Logic Level E nhancement Mode Field E ffect Transistor LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS
8	DB155S	Sangdest Microelectronics	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERS  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Designed for surface mount application  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts ar
9	MP34DB01	STMicroelectronics	MEMS audio sensor ■ ■ ■ ■ ■ ■ ■ ■ Single supply voltage Low power consumption 120 dBSPL acoustic overload point 62.6 dB signal-to-noise ratio Omnidirectional sensitivity –26 dBFS sensitivity PDM single-bit output with option for stereo configuration RHLGA package – B
10	TSH95	STMicroelectronics	HIGH SPEED LOW POWER QUAD OPERATIONAL AMPLIFIER WITH DUAL STANDBY POSITION 3 & 4 operators They reduce the consumption of the corresponding operatorS and put the output in a high impedance state. ORDER CODE Package Part Number TSH95I Temperature Range D -40°C, +125°C • Output 1 Inverting Input 1 Non-inverting Input 1 VCC
11	M58BW016DB	ST Microelectronics	16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages HIGH PERFORMANCE – Access Time: 80, 90 and 100ns – 56MHz Effective
12	M29W800DB	ST Microelectronics	8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main
13	TS902	ST Microelectronics	RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER WITH STANDBY POSITION : TS904. April 1999 Standby 1 Output 1 2 14 13 12 V CC+ Output 2 N.C. Inverting Input 2 Non-inverting Input 2 N.C. V CC - N.C. 3 Inverting Input 1 Non-inverting input 1 N.C. 4 5 6 + + 11 10 9 8 N.C. 7 1/12 TS902 SCHEMATIC DIAGRAM (1/2 TS902
14	SDB65N03L	SamHop Microelectronics	N-Channel Logic Level E nhancement Mode Field E ffect Transistor C /W C /W S DP /B 65N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON)
15	TDB0157	ST Microelectronics	Low Power Dual Bi-FET Operational Amplifiers
16	29W320DB	ST Microelectronics	M29W320DB SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME – 10µs per Byte/Word typical s 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Pa
17	DB153S	Sangdest Microelectronics	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERS  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Designed for surface mount application  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts ar
18	DB152S	Sangdest Microelectronics	SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIERS  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Designed for surface mount application  Plastic material-UL flammability 94V-0  This is a Pb − Free Device  All SMC parts ar
19	TDB0555CM	STMicroelectronics	Timer
20	ST2100	STMicroelectronics	Broadband powerline communication SoC optimized  Configurable HW engine for multiple HomePlug® PHY and real-time MAC layers processing supporting:  Transport stream interface (video TS)  Vectored interrupt controller (VIC)  JTAG (IEEE1149.1) interface  Three CPU instruction sets – HomePlug