ST Microelectronics BU9 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BU932RP	ST Microelectronics	NPN Transistor
2	BU931	ST Microelectronics	Automotive-grade high voltage ignition coil driver NPN power transistor TAB roduct(s) 1 P 2 lete TO-3 Obsolete Product(s) - Obso Figure 1: Internal schematic diagram  AEC-Q101 qualified  Very rugged Bipolar technology  High operating junction temperature Applications  High ruggedness electronic ignitions Descriptio
3	BU941P	ST Microelectronics	High voltage ignition coil driver NPN power Darlington transistors ■ Very rugged Bipolar technology ■ High operating junction temperature ) ■ Integrated antiparallel collector-emitter diode ct(sApplications rodu ■ High ruggedness electronic ignitions PDescription leteThe devices are bipolar Darlington transistors om
4	BU931RP	ST Microelectronics	NPN Transistor
5	BU921	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
6	BU921PFI	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
7	BU922PFI	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
8	BU941ZP	ST Microelectronics	High voltage ignition coil driver NPN power Darlington transistors ■ Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully insulated package (U.L. compliant) for easy mounting Applications ■ High ruggedness electronic ignitions Description The devices are bipolar Darl
9	BU931RPFI	ST Microelectronics	NPN Transistor
10	BU920P	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
11	BU920PFI	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
12	BU921ZPFI	ST Microelectronics	NPN POWER DARLINGTON
13	BU921ZT	ST Microelectronics	NPN POWER DARLINGTON
14	BU921ZTFI	ST Microelectronics	NPN POWER DARLINGTON
15	BU922	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
16	BU922T	ST Microelectronics	HIGH VOLTAGE POWER DISSIPATION
17	BU931T	ST Microelectronics	NPN power Darlington transistor  AEC-Q101 qualified  Very rugged Bipolar technology  High operating junction temperature Applications  High ruggedness electronic ignitions Description This is a high voltage power Darlington transistor developed using multi-epitaxial planar tech
18	BU941	ST Microelectronics	High voltage ignition coil driver NPN power Darlington transistors ■ Very rugged Bipolar technology ■ High operating junction temperature ) ■ Integrated antiparallel collector-emitter diode ct(sApplications rodu ■ High ruggedness electronic ignitions PDescription leteThe devices are bipolar Darlington transistors om
19	BU941Z	ST Microelectronics	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO I EBO V CL ∗ V CE(sat )∗ Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Clamping Voltage Collector-Emitter Saturation Voltage Base-Emitt er
20	BU941ZPFI	ST Microelectronics	High voltage ignition coil driver NPN power Darlington transistors ■ Very rugged bipolar technology ■ Built in clamping Zener ■ High operating junction temperature ■ Fully insulated package (U.L. compliant) for easy mounting Applications ■ High ruggedness electronic ignitions Description The devices are bipolar Darl