ST Microelectronics AN6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	VIPERGAN65	STMicroelectronics	Advanced quasi-resonant offline high voltage converter • Quasi-resonant (QR) flyback controller • 650 V E-mode power GaN transistor • Embedded sense FET • Dynamic blanking time and adjustable valley synchronization delay functions, to maximize efficiency at any input line and load condition • Valley-lock
2	1GW3B2AN6	ST Microelectronics	NAND Flash Memory SUMMARY www.DataSheet4U.com ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width –
3	AN671	ST Microelectronics	Prevention of Data Corruption in ST6 On-Chip EEPROM ARE SOLUTION This solution only applies to the power down sequence which represents the majority of data corruption risks. The solution consists in disabling the enable bit of the EEPROM control register after writing into the EEPROM and before switc