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STMicroelectronics |
EEPROM • Industry standard MICROWIRE™ bus • Single supply voltage: – 2.5 V to 5.5 V for M93Cx6-W – 1.8 V to 5.5 V for M93Cx6-R • Dual organization: by word (x16) or byte (x8) • Programming instructions that work on: byte, word or entire memory • Self-timed |
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STMicroelectronics |
MICROWIRE Serial Access EEPROM SUMMARY ■ Industry Standard MICROWIRE Bus ■ Single Supply Voltage: – 4.5 to 5.5V for M93Cx6 – 2.5 to 5.5V for M93Cx6-W – 1.8 to 5.5V for M93Cx6-R ■ Dual Organization: by Word (x16) or Byte (x8) ■ Programming Instructions that work on: Byte, Word or E |
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STMicroelectronics |
MICROWIRE Serial Access EEPROM SUMMARY ■ Industry Standard MICROWIRE Bus ■ Single Supply Voltage: – 4.5 to 5.5V for M93Cx6 – 2.5 to 5.5V for M93Cx6-W – 1.8 to 5.5V for M93Cx6-R ■ Dual Organization: by Word (x16) or Byte (x8) ■ Programming Instructions that work on: Byte, Word or E |
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STMicroelectronics |
EEPROM • Industry standard MICROWIRE™ bus • Single supply voltage: – 2.5 V to 5.5 V for M93Cx6-W – 1.8 V to 5.5 V for M93Cx6-R • Dual organization: by word (x16) or byte (x8) • Programming instructions that work on: byte, word or entire memory • Self-timed |
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STMicroelectronics |
16Kbit/ 8Kbit/ 4Kbit/ 2Kbit/ 1Kbit and 256bit 8-bit or 16-bit wide SUMMARY s Industry Standard MICROWIRE Bus s Figure 1. Packages Single Supply Voltage: – 4.5V to 5.5V for M93Cx6 – 2.5V to 5.5V for M93Cx6-W – 1.8V to 5.5V for M93Cx6-R 8 1 PDIP8 (BN) s s Dual Organization: by Word (x16) or Byte (x8) Programming |
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STMicroelectronics |
MICROWIRE Serial Access EEPROM SUMMARY ■ Industry Standard MICROWIRE Bus ■ Single Supply Voltage: – 4.5 to 5.5V for M93Cx6 – 2.5 to 5.5V for M93Cx6-W – 1.8 to 5.5V for M93Cx6-R ■ Dual Organization: by Word (x16) or Byte (x8) ■ Programming Instructions that work on: Byte, Word or E |
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STMicroelectronics |
1K 64 x 16 SERIAL MICROWIRE EEPROM ction. A Read instruction loads the address of the first word to be read into an internal address pointer. Table 1. Signal Names S D Q C PRE W VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Protect Enable Write Enable Sup |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
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STMicroelectronics |
EEPROM • Industry standard MICROWIRE™ bus • Single supply voltage: – 2.5 V to 5.5 V for M93Cx6-W – 1.8 V to 5.5 V for M93Cx6-R • Dual organization: by word (x16) or byte (x8) • Programming instructions that work on: byte, word or entire memory • Self-timed |
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ST Microelectronics |
(ST93C66 / ST93C67) 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM not recommended for new de signs. 1/13 www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/ |
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STMicroelectronics |
MICROWIRE serial EEPROM • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential re |
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STMicroelectronics |
MICROWIRE serial EEPROM • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential re |
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STMicroelectronics |
EEPROM • Industry standard MICROWIRE™ bus • Single supply voltage: – 2.5 V to 5.5 V for M93Cx6-W – 1.8 V to 5.5 V for M93Cx6-R • Dual organization: by word (x16) or byte (x8) • Programming instructions that work on: byte, word or entire memory • Self-timed |
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STMicroelectronics |
PUSH-BRIDGE DRIVER ectedtogetherand used for heatsinking. April 1993 1/5 L293C BLOCK DIAGRAM TRUTH TABLE Input H L X Z = High output impedance Enable H H L Output H L Z SWITCHING TIMES 2/5 L293C ABSOLUTE MAXIMUM RATINGS Symbol VS VSS Vi VEN Iout Ptot Tstg, Tj Su |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise s |
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ST Microelectronics |
(ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM of the ST93C46 provides Power-on Data Protection by inhibiting any operation when the Supply is too low. The design of the ST93C46 and the High Endurance CMOS technology used for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles |
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ST Microelectronics |
(ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM of the ST93C46 provides Power-on Data Protection by inhibiting any operation when the Supply is too low. The design of the ST93C46 and the High Endurance CMOS technology used for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles |
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ST Microelectronics |
(ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM of the ST93C46 provides Power-on Data Protection by inhibiting any operation when the Supply is too low. The design of the ST93C46 and the High Endurance CMOS technology used for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles |
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ST Microelectronics |
(ST93C66 / ST93C67) 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM not recommended for new de signs. 1/13 www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/ |
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ST Microelectronics |
ST93C46CB of the ST93C46 provides Power-on Data Protection by inhibiting any operation when the Supply is too low. The design of the ST93C46 and the High Endurance CMOS technology used for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles |
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Desde 2024. D4U Semiconductor.
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