| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
General-purpose single bipolar timer ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from microseconds to hours ■ Operates in both astable and monostable modes ■ Output can source or sink up to 200 mA ■ Adjustable duty cycle ■ TTL compatible ■ Temperature |
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ST Microelectronics |
STP55NF06 Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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STMicroelectronics |
N-channel MOSFET Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V <0.054 Ω 54 A t(s) ■ 100% avalanche tested c ■ Low input capacitance and gate charge du ■ Low gate input resistance ProApplication te ■ Switching applications soleDescription ObThis series of device |
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STMicroelectronics |
STP55N06L |
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STMicroelectronics |
N-channel MOSFET Type STP55NF06L STB55NF06L STB55NF06L-1 VDSS 60V 60V 60V RDS(on) ID <0.018Ω 55A <0.018Ω 55A <0.018Ω 55A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET is the lates |
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STMicroelectronics |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS low input bias and offset currents, low input offset voltage and input offset voltage drift,coupledwith offsetadjust which doesnot degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth,extremelyfasts |
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ST Microelectronics |
N-Channel MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s L |
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STMicroelectronics |
STW55NM60ND Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High |
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STMicroelectronics |
General-purpose single bipolar timer ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing from microseconds to hours ■ Operates in both astable and monostable modes ■ Output can source or sink up to 200 mA ■ Adjustable duty cycle ■ TTL compatible ■ Temperature |
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STMicroelectronics |
N-channel MOSFET Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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STMicroelectronics |
N-channel MOSFET Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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STMicroelectronics |
N-channel Power MOSFET Type STI55NF03L VDSS 30 V RDS(on) max < 0.013 Ω ID 55 A ■ Optimized for high switching operation ■ Low gate charge ■ Logic level gate drive Application ■ Switching applications – Automotive Description This Power MOSFET is the latest developme |
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ST Microelectronics |
STP55NE06L SIZE™ ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPL |
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SamHop Microelectronics |
N-Channel Logic Level E nhancement Mode Field E ffect Transistor nt R JC R JA 1 2.5 62.5 C /W C /W S DP /B 55N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) 4 Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage S ymbol B |
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STMicroelectronics |
N-channel MOSFET Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package ■ 100% avalanche tested ■ Logic level drive ID(1) PTOT 80 A 110 W Applications ■ Switching applications ■ Automotive Description These devices are |
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ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET SIZE™ ” POWER MOSFET TYPE ST P55NE06 ST P55NE06FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 30 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPL |
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ST Microelectronics |
N-CHANNEL POWER MOSFET Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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ST Microelectronics |
N-Channel Power MOSFET Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI |
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ST Microelectronics |
N-Channel MOSFET Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications |
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ST Microelectronics |
N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s L |
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Desde 2024. D4U Semiconductor.
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