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ST Microelectronics |
High Power PNP Epitaxial Planar Bipolar Transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive 2 1 3 Applications ■ TO-247 Audio power amplifier Description The device |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s) ■ Typical ft = 20 MHz c ■ Fully characterized at 125 oC roduApplications P ■ Audio power amplifier leteDescription soThe device is a NPN transistor manufact |
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STMicroelectronics |
Low voltage high performance PNP power transistor ■ ■ ■ Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ DC-DC converter, voltage regulation General purpose switching equipment SOT-89 Description Figure 1. The device is a PN |
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ST Microelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description The devices are NPN transistors manufactured using new “P |
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ST Microelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz 3 2 1 Application Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transisto |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description Figure 1. The device is a PNP transistor |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier Description The device is a PNP transistor manufactured u |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactur |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transist |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a NPN transistor manufactured us |
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Silan Microelectronics |
CRD low start-up stabilized current supply voltage, stable constant-current characteristics and high forward breakdown voltage for its advanced process and smart design. SDH series CRD has powerful anti-interference capacity of surge current between the |
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ST Microelectronics |
Low voltage fast-switching NPN power transistor ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Voltage regulators ■ High efficiency low voltage switching applications Description The device is a low voltage NPN transistor |
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ST Microelectronics |
(2STF1360 / 2STN1360) LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ LED ■ Voltage regulation ■ Relay drive Description This device is an NPN transistor manufactured using new l |
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ST Microelectronics |
High Gain Low Voltage PNP Power Transistor ■ ■ ■ ■ Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 1.5 A continuous collector current In compliance with the 2002/93/EC European Directive TO-92 Description The device in a PNP transistor manufactured using new “PB |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ High breakdown voltage VCEO = www.DataSheet4U.com ■ Complementary to 2STW1693 ■ ■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications ■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactu |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STC5949 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ Audio power amplifier TO-264 Description The device is a PNP transistor manufactured us |
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STMicroelectronics |
High power PNP epitaxial planar bipolar transistor ■ ■ ■ ■ ■ High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactu |
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STMicroelectronics |
High power NPN epitaxial planar bipolar transistor ■ ■ ■ ■ High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz 3 Application ■ Audio power amplifier 1 2 TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar T |
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Desde 2024. D4U Semiconductor.
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