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ST Microelectronics |
High power NPN silicon transistor ■ High power dissipation ■ Low collector-emitter saturation voltage t(s)Description cThe device is a planar NPN transistor mounted in uTO-3 metal case. It is intended for linear rodamplifiers and inductive switching applications. 1 2 TO-3 Obsole |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off Current (VBE = -3 V) IBEX Base Cut-off Current (VBE = -3 V) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, powe |
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STMicroelectronics |
Silicon Planar Epitaxial NPN transistor ) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 15 |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collec |
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STMicroelectronics |
SILICON NPN TRANSISTORS |
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STMicroelectronics |
Silicon Planar NPN Transistor |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
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ST Microelectronics |
Power MOSFETs Type STL60N32N3LL ■ ■ ■ ■ ■ VDSS Q1 Q2 30 V 30 V RDS(on) ID < 0.012 Ω 12 A < 0.008 Ω 15 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Po |
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STMicroelectronics |
Hi-Rel NPN bipolar transistor BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C ■ ■ ■ ■ ■ Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total |
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STMicroelectronics |
NPN transistor VCEO IC(max.) 80 V 1A • Hermetic packages • ESCC qualified • 100 krad hFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N3700HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure provi |
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STMicroelectronics |
SILICON NPN TRANSISTORS |
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STMicroelectronics |
Silicon Planar Epitaxial transistor amb = 25 °C unless otherwise specified) Symbol I CBO V( B R)CBO V (BR)CES V( BR)CE O * V( B R)E BO V CE (s at )* Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V B E = 0) |
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STMicroelectronics |
Silicon Planar PNP Transistor |
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STMicroelectronics |
NPN Transistor |
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STMicroelectronics |
Hi-Rel PNP dual matched bipolar transistors Vceo 60 V IC(max.) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation |
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STMicroelectronics |
Silicon Planar PNP Transistor |
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STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR Conditions ICEV Collector Cut-off for 2N3771 VCB = 50 V Current (VBE = -1.5V) for 2N3772 VCB = 100 V for all VCB = 30 V Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V ICBO Collector Cut-off |
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STMicroelectronics |
Silicon Planar PNP Transistor |
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Desde 2024. D4U Semiconductor.
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