| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
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|
|
|
SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
|
|
|
|
SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
|
|
|
|
SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
|
|
|
|
SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
|
|
|
|
SSDI |
HIGH VOLTAGE RECTIFIER • Ultra Fast Recovery: 60nsec Maximum • PIV to 3500 Volts • Hermetically Sealed • Void-Free Construction • Metallurgically Bonded • 175°C Maximum Operating Temperature • Micro Miniature Package • TX, TXV, and Space Level Screening Available SGB10UF |
|
Desde 2024. D4U Semiconductor.
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