No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SPANSION |
Simultaneous Read/Write Flash Memory ARCHITECTURAL ADVANTAGES ■ 128 Mbit Page Mode device — Page size of 8 words: Fast page read access from random locations within the page ■ Both top and bottom boot blocks in one device ■ Manufactured on 0.13 µm process technology ■ 20-year data rete |
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SPANSION |
(AM70PDLI27BDH / AM70PDLI29BDH) Stacked Multi-Chip Package (MCP/XIP) Flash Memory ■ Consists of Am29PDL127H/Am29PDL129H, 32 Mb pSRAM and two Am29LV640M. ■ Power supply voltage of 2.7 to 3.3 volt ■ High performance (XIP) — Access time as fast as 65 ns initial / 25 ns page ■ SecSiTM (Secured Silicon) Sector region — Up to 128 words |
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SPANSION |
(AM70PDLI27BDH / AM70PDLI29BDH) Stacked Multi-Chip Package (MCP/XIP) Flash Memory ■ Consists of Am29PDL127H/Am29PDL129H, 32 Mb pSRAM and two Am29LV640M. ■ Power supply voltage of 2.7 to 3.3 volt ■ High performance (XIP) — Access time as fast as 65 ns initial / 25 ns page ■ SecSiTM (Secured Silicon) Sector region — Up to 128 words |
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SPANSION |
Simultaneous Read/Write Flash Memory ARCHITECTURAL ADVANTAGES ■ 128 Mbit Page Mode device — Page size of 8 words: Fast page read access from random locations within the page ■ Both top and bottom boot blocks in one device ■ Manufactured on 0.13 µm process technology ■ 20-year data rete |
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