| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SOURCESEMI |
600V N-Channel MOSFET ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced plana |
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SOURCESEMI |
600V N-Channel MOSFET ■ 4.5A,600v,RDS(on)=2.5Ω@VGS=10V ■ Gate charge (Typical 27nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced plana |
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Desde 2024. D4U Semiconductor.
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