| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
SII Semiconductor |
SUPER-SMALL PACKAGE 2-CIRCUIT HIGH RIPPLE-REJECTION LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR • Output voltage: 1.2 V to 5.0 V, selectable in 0.05 V step • Input voltage: 1.7 V to 6.5 V • Output voltage accuracy: ±1.0% • Dropout voltage: 130 mV typ. (3.0 V output product, IOUT = 100 mA) • Current consumption: During operation: 25 μA |
|
|
|
|
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) |
|
|
|
|
Sirectifier Semiconductors |
SPT IGBT Modules on) VCC = 600V, IC = 100A tr RGon = RGoff = 9 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 100A; Tj = 125oC Qrr d |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Modules ions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 300A; Tj = 25(125)oC Qrr di/dt = 2000A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Dat |
|
|
|
|
Sirectifier Semiconductors |
SPT IGBT Modules tions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 300A; Tj = 125oC Qrr di/dt = 2400A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanica |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Modules o www.DataSheet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 50A tr RGon = RGoff =2.7 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 40(42) 9(10) 120(130) 12(21) 0.5(1.0) 1.2 0.44 ns ns ns ns |
|
|
|
|
Sirectifier Semiconductors |
SPT IGBT : VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 50A; Tj = 125oC Qrr di/dt = 2100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data |
|
|
|
|
SII Semiconductor |
SUPER-LOW CURRENT CONSUMPTION 150 mA VOLTAGE REGULATOR |
|
|
|
|
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0. |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Modules heet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 300A tr RGon = RGoff =3.3 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 95(105) 69(71) 320(355) 42(47) 6.5(11) 0.6 0.1 ns ns ns ns mJ m K/W E |
|
|
|
|
Sirectifier Semiconductors |
SPT IGBT Modules VCC = 600V, IC = 200A tr RGon = RGoff = 5 , Tj = 125oC td(off) VGE = ± 15V tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF =200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 200A; Tj = 125oC Qrr di/dt |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Modules et4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 200A tr RGon = RGoff =1.5 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 163(180) 43(49) 253(285) 33(41) 4.6(6.3) 0.9 0.17 ns ns ns ns mJ m K/W |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT di/dt=_ 2000A/us,Tj = 125oC _ IF = 200A, VGE = 0V, VR= 600V Qrr _ di/dt= 2000A/us, Tj = 25(125)oC Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 3(12) 2.5(3.1) 13 2 1 108 max. 6.5 4 400 3(3.7) U |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 75A tr RGon = RGoff =3.0 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 63(65) 22(25) 155(170) 20(35) 0.7(2.4) 1.2 0.35 ns ns ns ns mJ m K/W Eon(Eoff) RC |
|
|
|
|
SII Semiconductor |
100 mA CMOS VOLTAGE REGULATOR super low current consumption and low dropout voltage. The regulator block has low current consumption of 0.35 μA typ. and high-accuracy output voltage of ±1.0%. The function of the supply voltage divided output is prepared in the S-1740/1741 Series. |
|
|
|
|
SII Semiconductor |
100 mA CMOS VOLTAGE REGULATOR super low current consumption and low dropout voltage. The regulator block has low current consumption of 0.35 μA typ. and high-accuracy output voltage of ±1.0%. The function of the supply voltage divided output is prepared in the S-1740/1741 Series. |
|
|
|
|
SII Semiconductor |
HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type (U-MOSIII) energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) JEDEC JEITA TOSHIBA W ― ― 2-3R1E 0.75 Weight: 0.035 g (typ.) 0.6 Circuit Configuration 0.35 8 46.8 6 |
|
|
|
|
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) c electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power d |
|
|
|
|
Sirectifier Semiconductors |
NPT IGBT Modules 10uS, VGE 15V, Tvj = 125 C , Vcc = 900V under following conditions: VCE = 600V, IC = 300A RGon = RGoff =3.3 , , Tj = 25(125)oC VGE = ± 15V www.DataSheet4U.com QG VGE = -15V...+15V td(on) tr td(off) tf Eon(Eoff) 110(120) 60(70) 550(570) 70(80) 35( |
|
Desde 2024. D4U Semiconductor.
|