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SHIKUES |
N-Channel Enhancement Mode MOSFET ●30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V. ●Super High dense cell design for extremely low RDS(ON) . ●Reliable and Rugged. ●SC-59 for Surface Mount Package. Applications ●Power Managemen |
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Desde 2024. D4U Semiconductor.
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