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Shantou Huashan Electronic Devices |
NPN Epitaxial Silicon Transistor 85 40 0.1 0.1 500 1 0.5 1.2 μA μA 40 25 6 100 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 VCE=10V, IC=50mA █ hFE Classi |
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SHANTOU HUASHAN ELECTRONIC |
NPN SILICON TRANSISTOR IC=500mA,IB=50mA VCE=1V, IC=10mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification B 85—160 C 120—200 D 160—300 |
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SHANTOU HUASHAN ELECTRONIC |
PNP SILICON TRANSISTOR (sat) BVCBO BVCEO BVEBO 85 40 -0.1 -0.1 500 -1 -0.5 -1.2 μA μA fT -40 -25 -6 100 V V V V V V MHz VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100μA，IE=0 IC=-2mA |
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SHANTOU HUASHAN ELECTRONIC |
PNP SILICON TRANSISTOR C=-500mA, IB=-50mA IC=-500mA,IB=-50mA VCE=-1V, IC=-10mA IC=-100μA，IE=0 IC=-2mA，IB=0 IE=100μA，IC=0 Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification B 85 |
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Desde 2024. D4U Semiconductor.
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