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Shantou Huashan Electronic Devices |
NPN Silicon Transistors V V V V V nA nA MHz pF dB IC=100¦Ì IC=100¦Ì IE=100¦Ì A, IE=0 A, IB=0 A£¬ IC=0 DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCB= |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP SILICON TRANSISTOR tter E 2 Collector C 3 Base B Unit Test Conditions 135 270 200 400 300 600 Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1116 Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R ANSISTOR H1116 |
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Shantou Huashan Electronic Devices |
NPN SILICON TRANSISTOR Typ Max Unit Test Conditions 0.1 μA VCB=35V, IE=0 0.1 μA VEB=6V, IC=0 85 500 VCE=1V, IC=100mA 40 VCE=1V, IC=800mA 1 V VCE=1V, IC=10mA 0.5 V IC=800mA, IB=80mA 1.2 V IC=800mA,IB=80mA 40 V IC=100μA，IE=0 25 V IC=2mA，IB=0 6 V IE=100μA，IC=0 9.0 1 |
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Shantou Huashan Electronic Devices |
NPN SILICON TRANSISTOR 500 VCE=1V, IC=50mA 40 VCE=1V, IC=500mA 0.6 V IC=500mA, IB=50mA 1.2 V IC=500mA,IB=50mA 0.6 0.73 V VCE=1V, IC=10mA 40 V IC=100μA，IE=0 20 V IC=2mA，IB=0 5 V IE=100μA，IC=0 B 85—160 C 120—200 D 160—300 E 270—500 Shantou Huashan Electronic Dev |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR 0¦Ì A, IE=0 IC=-10mA, IB=0 IE=-100¦Ì A£¬ IC=0 VCB=-30V, IE=0 VCE=-5V, IC=-2mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance 110 - 90 - |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP Silicon Transistor rrent Gain 70 240 VCE=-2V, IC=-0.5A 40 VCE=-2V, IC=-1.5A Collector- Emitter Saturation Voltage -0.5 V IC=-1A, IB=-50mA Base-Emitter Saturation Voltage -1.2 V IC=-1A, IB=-50mA Current Gain-Bandwidth Product 100 MHz VCE=-2V, IC=-0.5A Outpu |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP SILICON TRANSISTOR 50V, IE=0 -100 nA VEB=-5V, IC=0 700 VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA -0.3 V IC=-100mA, IB=-10mA -1.1 V IC=-100mA, IB=-10mA V IC=-100μA, IE=0 V IC=-1mA, IB=0 V IE=-10μA，IC=0 MHz VCE=-10V, IC=-1mA █ hFE Classification O 70—140 Y 120—240 GR |
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Shantou Huashan Electronic Devices |
NPN Epitaxial Silicon Transistor 85 40 0.1 0.1 500 1 0.5 1.2 μA μA 40 25 6 100 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 VCE=10V, IC=50mA █ hFE Classi |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0. 5 0.7 7.0 0. 193 ¦Ì A VCE=40V, IB=0 ¦Ì A VEB=5V, IC=0 VCE=5V, IC=5mA V V V Kohm Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 88 125 0.3 0.9 2.0 13 0.234 IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=5mA V |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0 50 5 0.1 0.1 100 0.4 0.7 7.0 V V V ¦Ì A ¦Ì A V V V K¦¸ IC=50¦Ì A, IE=0 IC=1mA, IB=0 IE=50¦Ì A£¬ IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA VCE=10V,IC=5mA VCB=10V,f=1MHz 600 0.3 0.55 1.2 10 |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR V mV MHz pF dB IC=100¦Ì IE=1mA£¬ A, IE=0 IC=0 IC=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0 f=100MHz VCE=5V, IC=0.2Ma f=1KHz£¬ Rg=2K¦¸ |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR 0.15 0.2 1 1 V V V nA nA IC=100¦Ì IE=10¦Ì A, IE=0 A£¬ IC=0 IC=1mA, IB=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA DC Current Gain VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) Collector- Emitter Saturation Voltage Ba |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR r Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance - 30 - 30 -5 - 15 110 - 90 - 250 - 0.7 - 0.9 - 660 150 6 - 750 - 800 800 - 300 - 650 V V V nA IC=-100¦Ì A, IE=0 IC=-10mA |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
Silicon Controlled Rectifier * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi- |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR VCE=4V, IC=3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, IB=40mA VCE=4V,IC |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
NPN SILICON TRANSISTOR ) VBE(on) tD tR tS tF IC=30mA, IB=0 VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=0.5A VCE=4V, IC=3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storag |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP SILICON TRANSISTOR -4V, IC=-0.5A VCE=-4V, IC=-3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage Deiay time Rise Time Storage Time Fall Time V V V V uS uS uS uS IC=-5A, IB=-10mA IC=-10A, IB=-40mA IC=-10 |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP SILICON TRANSISTOR VBE(sat) VBE(on) tD tR tS tF IC=-30mA, IB=0 VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-0.5A VCE=-4V, IC=-3A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Vo ltage Deiay time |
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SHANTOU HUASHAN ELECTRONIC DEVICES |
PNP SILICON TRANSISTOR C=-1.5A * DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-off Current V V nA nA MHz pF IC=-1.5A, IB=-75mA * IC=-1.5A, IB=-75mA * VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA VCB=-10V, IE=0，f=1 |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0.1 0.8 1.0 7.0 0.8 ¦Ì A VCE=40V, IB=0 ¦Ì A VEB=5V, IC=0 VCE=5V, IC=5mA V V V Kohm Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 250 360 0.3 1.5 4.0 13 1.2 IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA V |
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Desde 2024. D4U Semiconductor.
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