No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SEMTECH |
PNP Silicon Epitaxial Planar Transistor eakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 μA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 |
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SEMTECH |
NPN Transistor Exchange, Stock Code: 724) ® Dated : 17/06/2005 ST 9013 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. DC Current Gain at VCE=1V, IC=50mA Current Gain Group G hFE 110 - 183 H hFE 177 - 250 I hFE 250 - 380 at VCE=1V, IC=500 |
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SEMTECH |
PNP Silicon Epitaxial Planar Transistor t -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Vo |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VCB=5V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Base Emitter Voltage at VCE=5V, IC=1mA Collect |
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SEMTECH |
NPN Transistor lector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=50V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA,IB=5mA Base Saturation Voltage at IC=100mA,IB=5mA Gain |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Base Emitter on Voltage at VCE=5V, IC=1mA Coll |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Cutoff Current at VCB = 12 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Base Capacitance at VCB = 10 |
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