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SEMTECH ELECTRONICS |
NPN Transistor mA Collector Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.1mA, f=1KHz, RG=10KΩ NF 1 COB 4 fT 80 -VCE(sat) -IEBO -ICBO hFE hFE hFE 70 120 200 Min. Typ. www.DataSheet4U.com Max. Unit 140 240 400 - 0.1 0.1 0.3 7 µA µA V M |
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SEMTECH ELECTRONICS |
NPN Transistor apacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VCE(sat) fT Cob Min. 200 80 20 15 5 Typ. 250 13 Max. 400 100 100 35 120 Unit nA nA V V V mV mV MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Si |
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SEMTECH ELECTRONICS |
PNP Transistor µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE hFE hFE |
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SEMTECH ELECTRONICS |
NPN Transistor utoff Current at -VEB=4V Collector Saturation Voltage at -IC=300mA, -IB=30mA Transition Frequency at -VCE=5V, -IE=20mA, f=100MHz Collector Output Capacitance at -VCB=10V, f=1MHz Cob 7 fT 200 -VCE(sat) -IEBO -ICBO hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR |
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SEMTECH ELECTRONICS |
NPN Transistor SOT-23 Plastic Package ․Excellent hFE linearity Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range - |
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SEMTECH ELECTRONICS |
NPN Transistor V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 1 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 mA,t |
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SEMTECH ELECTRONICS |
NPN Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range 1) Value 15 12 500 1 200 150 -55 to |
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SEMTECH ELECTRONICS |
NPN Transistor bol hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) Cob fT Min. 120 180 40 32 5 50 Max. 270 390 0.5 0.5 0.5 30 Unit µA µA V V V V pF MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed o |
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SEMTECH ELECTRONICS |
NPN Transistor at IC=10mA, IB=1mA Collector Emitter Breakdown Voltage at IC=10mA Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10mA Output Capacitance at VCB=5V, f=1MHz Storage Time a |
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SEMTECH ELECTRONICS |
NPN Transistor ent at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MH |
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SEMTECH ELECTRONICS |
NPN Transistor ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage E |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor 50D hFE hFE hFE ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT Min. 100 160 40 40 25 6 - Typ. 100 Max. 250 400 100 0.5 1.2 - Unit nA V V V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company |
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SEMTECH ELECTRONICS |
NPN Transistor C=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz COB 4.5 fT 180 -VBE 0.58 -VCE(sat) -IEBO -ICBO hFE hFE hFE hFE 90 135 200 300 Min. Typ. www.DataSheet4U.com Max. Unit 180 270 400 600 0.1 0.1 0.3 0.68 - µA |
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SEMTECH ELECTRONICS |
NPN Transistor 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, IE= 0.3 mA, f = 100 Hz, RG = 10 KΩ Symbol E F hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob NF Min. 150 250 90 60 50 6 Typ. 200 4 Max. 300 500 0.1 0.1 0.3 1 20 Unit V V V |
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SEMTECH ELECTRONICS |
NPN Transistor se Figure at -VCE = 6 V, -IC = 1 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/08/2006 MMBTSA1256 www.DataSheet4U. |
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SEMTECH ELECTRONICS |
NPN Transistor VCE = 5 V, -IC = 10 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz O Y Symbol hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE -V(BR)CEO -V(BR)EBO fT Cob Min. 100 160 40 0.5 25 5 Typ. 120 13 Max. 200 320 0.1 0.1 0.4 0.8 Unit µA µA V V V V MHz pF SE |
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SEMTECH ELECTRONICS |
NPN Transistor C = 10 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Group O Y Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE fT Cob Min. 100 160 40 30 5 0.5 Typ. 120 13 Max. 200 320 100 100 0.4 0.8 Unit nA nA V V V V MHz |
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SEMTECH ELECTRONICS |
NPN Transistor Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 500 mA, -IB = 25 mA Transition Frequency at -VCE = 6 V, IE = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the |
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SEMTECH ELECTRONICS |
NPN Transistor Excellent hFE linearity: hFE=25(min) at VCE=-6V, IC=-400mA SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Jun |
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SEMTECH ELECTRONICS |
NPN Transistor O Y Symbol hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT Cob Min. 70 120 40 32 5 Typ. 200 7.5 Max. 140 240 0.1 0.1 0.25 Unit V V V µA µA V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a c |
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Desde 2024. D4U Semiconductor.
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