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SEMTECH |
Silicon Planar Power Zener Diodes |
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SEMTECH |
Silicon Epitaxial Planar Zener Diodes • Fits onto SOD-323 / SOT-23 footprints • MicroMELF package LS-31 1.2±0.05 Gl1.a3s5s Max. Cathode indification 0.19±0.05 2±0.1 2.5 Glass R Glass case MicroMELF HDimensions in mm Absolute Maximum Ratings (Ta = 25 OC) CParameter Power Dissipatio |
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SEMTECH |
NPN Transistor 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor nt at VCB=120V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at I |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor tter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capaci |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor ollector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Symbol hFE hFE hFE hFE hFE ICBO I |
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SEMTECH |
SILICON PLANAR ZENER DIODES • Zener breakdown voltage range – 2.0 V to 75 V • Package designed for optimal automated board assembly • Small package size for high density applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Thermal Resistance, Junction |
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SEMTECH |
Silicon Planar Power Zener Diodes ch International (BVI) Limited ® Dated：18/06/2012 Rev：01 BZV85C Characteristics at Ta = 25 OC Zener Voltage Range 1) Dynamic Resistance Reverse Current Type VZnom VZT (V) (V) at lZT (mA) ZZT Max. (Ω) at lZT (mA) ZZT Max. (Ω) at IZK (mA |
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SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Compact, 2-pin mini-mold type for high-density LS-31 mounting. (UMD2) • Non-wire bonding structure improves. • High demand voltage range (3.6V~36V) is manufactured on high-efficient non-wire bonding production line. • Fits onto SOD 323 / SOT 23 |
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SEMTECH ELECTRONICS |
NPN Transistor ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage E |
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SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES High reliability Applications Voltage stabilization Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Po |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor ollector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Symbol hFE hFE hFE hFE hFE ICBO I |
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SEMTECH |
NPN Transistor ctor Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω |
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SEMTECH |
SILICON PLANAR ZENER DIODES • Ideally Suited for Automated Assembly Processes • Total power dissipation: max. 500 mW LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter |
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SEMTECH |
SILICON PLANAR ZENER DIODES |
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SEMTECH |
SILICON PLANAR ZENER DIODES ONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/06/2007 BZX55C Type BZX55C0V8 2) BZX55C2V0 BZX55C2V2 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C |
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SEMTECH |
SILICON PLANAR POWER ZENER DIODES oldings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/06/2007 BZX85C Zener Voltage Range 1) Type VZnom V lZT for mA VZT V BZX85C2V7 2.7 80 BZX85C3V0 3.0 80 BZX85C3V3 3.3 70 BZX85C3V6 3.6 6 |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor t IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 1 mA Output Capacitance at VCB = 10 V, f = 1 MHz Power Gain at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz SEMTECH ELECTRONIC |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Curr |
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SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor 1) Small output capacitance 2) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction |
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Desde 2024. D4U Semiconductor.
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