| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
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SEMTECH |
SILICON PLANAR ZENER DIODES • Ideally Suited for Automated Assembly Processes • Total power dissipation: max. 500 mW LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter |
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Semtech Corporation |
(BZTxxx) Silicon Planar Zener Diodes |
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SEMTECH |
SILICON PLANAR ZENER DIODES • Ideally Suited for Automated Assembly Processes • Total power dissipation: max. 500 mW LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter |
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Semtech Corporation |
(BZTxxx) Silicon Planar Zener Diodes |
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Semtech Corporation |
(BZTxxx) Silicon Planar Zener Diodes |
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Semtech Corporation |
(BZTxxx) Silicon Planar Zener Diodes |
|
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Semtech Corporation |
(BZTxxx) Silicon Planar Zener Diodes |
|
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|
SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON PLANAR ZENER DIODES 18 5.35 5 5 5 5 5 5 5 5 5 5 5 Dynamic Resistance lZT (mA) 100 5 Reverse Leakage Current (IR at VR) IR (uA) Max. VR (V) LS-34 BZT2.0HS BZT2.0HSA BZT2.0HSB BZT2.2HS BZT2.2HSA BZT2.2HSB BZT2.4HS BZT2.4HSA BZT2.4HSB BZT2.7HS BZT2.7HSA BZT2.7HSB BZT3.0 |
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SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
|
|
|
|
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
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|
|
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
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|
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
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|
SEMTECH |
SILICON EPITAXIAL PLANAR ZENER DIODES • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Par |
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Desde 2024. D4U Semiconductor.
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