SANGDEST MICROELECTRONICS 120 Hoja de datos

No.	parte #	Fabricante	Descripción
1	MBR30120CT	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 175 ℃ TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a
2	MURS120	Sangdest Microelectronics	ULTRAFAST RECTIFIERS  Ultra-Fast Switching  High Current Capability  Low Reverse Leakage Current  High Surge Current Capability  Plastic Material has UL Flammability Classification 94V-O  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot 
3	120NQ035R-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
4	120NQ040-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
5	120NQ035-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
6	DSS120U	Sangdest Microelectronics	SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  Metal silicon junction, majority carrier conduction  Low power loss, high efficiency  High temperature soldering guaranteed: 260/10°C seconds,0.375"(9.5mm) le
7	SB120	SANGDEST MICROELECTRONICS	1.0A SCHOTTKY BARRIER RECTIFIER DO-41  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability  Low Power Loss, High Efficiency  High Surge Current Capability  For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and
8	120NQ045R-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
9	120NQ040R-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
10	120NQ045-1	SANGDEST MICROELECTRONICS	SCHOTTKY RECTIFIER • 150℃ TJ operation • Unique high power, Half-Pak module • Replaces three parallel DO-5’S • Easier to mount and lower profile than DO-5’S • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •
11	MBR120HW	SANGDEST MICROELECTRONICS	SURFACE MOUNT SCHOTTKY BARRIER DIODE • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material —UL Recognition Flammability Classification 94V-O • Green Products in Compliance with the R