| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 30V/95A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/80A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/40A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power f |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 30V/90A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Low On-Resistance • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power for serv |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Low On-Resistance • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management. • Switch Applications. • |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • LED backlighting • On board power |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance • Excellent QgxRDS(on) Product • Optimized for fast-switching applications • Lead Free and Green Devices Available (RoHS Compliant) Applications • Uninterr |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 80V/80A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V RDS (ON) =6.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • High Switching Speed • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • Power Management. • Switch Applications |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance • Excellent QgxRDS(on) Product • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applicatio |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • DC/DC Converte |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 60V/100A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =4.3mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • On board power |
|
|
|
|
Ruichips |
Dual N-Channel Advanced Power MOSFET • 30V/30A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/DC Converters • On board power f |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management. • Switch |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 40V/20A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • High Switching Speed • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • Power Management. • Switch Applications. |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 30V/50A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Advanced HEFET® Technology • Ultra Low On-Resistance • Excellent QgxRDS(on) Product • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications |
|
|
|
|
Ruichips |
N-Channel Advanced Power MOSFET • 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC/ |
|
Desde 2024. D4U Semiconductor.
|