Rohm SIR Hoja de datos

No.	parte #	Fabricante	Descripción
1	SIR-320ST3F	Rohm	Infrared light emitting diode 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 9.0 mW (IF = 50 mA). 3) Wide radiation angle θ = ±18_. 4) Emission spectrum well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high reliab
2	SIR-568ST3F	Rohm	Infrared light emitting diode 1) High luminous output 13 mW. 2) Fast response is possible 50 MHz cutoff frequency. FAbsolute maximum ratings (Ta = 25_C) 179 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-568ST3F FElectrical and optical characteristic curves
3	SIR-341ST3F	Rohm	Infrared light emitting diode 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 8.4 mW (IF = 50 mA). 3) Wide radiation angie θ1 / 2 = ±16deg. 4) Peak wavelength well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high r
4	SIR-568ST3	Rohm	Infrared light emitting diode 1) High luminous output 13 mW. 2) Fast response is possible 50 MHz cutoff frequency. FAbsolute maximum ratings (Ta = 25_C) 179 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-568ST3F FElectrical and optical characteristic curves
5	SIR-34ST3F	Rohm	Infrared light emitting diode 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 3) Wide radiation angle θ = 27_. 4) Emission spectrum well suited to silicon detectors (λP = 950 nm). 5) Good current-optical output linearity. 6) Long life, high reliabi
6	SIR-505STA47	Rohm	Infrared light emitting diode 1) φ5 mm plastic package. 2) Direct-mount type. 3) Long life and high reliability. FAbsolute maximum ratings (Ta = 25_C) 186 Sensors FElectrical and optical characteristics (Ta = 25_C) SIR-505STA47 FElectrical and optical characteristic curves
7	SIR-563ST3F	Rohm	Infrared light emitting diode 1) High efficiency, high output PO = 11.0 mW (IF = 50 mA). 2) Wide radiation angle θ 1 / 2 = 15deg. 3) Emission spectrum well suited to silicon detectors (λP = 940 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. 6) Low
8	SIR-56ST3	Rohm	Infrared light emitting diode 1) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 2) Emission spectrum well suited to silicon detectors. 3) Good current-optical output linearity. 4) Long life, high reliability. 5) Low cost, clear epoxy resin package. FAbsolute maximum rati
9	SIR-56ST3F	Rohm	Infrared light emitting diode 1) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 2) Emission spectrum well suited to silicon detectors. 3) Good current-optical output linearity. 4) Long life, high reliability. 5) Low cost, clear epoxy resin package. FAbsolute maximum rati
10	SIR341ST3F	Rohm	Infrared Light Emitting Diode / Top View Type 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability.
11	SIR341ST3F	Rohm	Infrared Light Emitting Diode / Top View Type 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability.