Rohm SCH Hoja de datos

No.	parte #	Fabricante	Descripción
1	BU4584	Rohm	Hex Schmitt trigger • 1) Low power dissipation. 2) Wide range of operating power supply voltage. 3) High input impedance. 4) High fan-out. 5) Direct drive of 2 L-TTL inputs and LS-TTL input. •Block diagram I1 1 14 VDD 13 I6 12 O6 11 I5 10 O5 9 O1 2 I2 3 O2 4 I3
2	BAS40-06HM	ROHM	Schottky Barrier Diode 1) Small mold type (SOT-23) 2) High reliability 3) Low VF Construction Silicon epitaxial planar type 4C ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN Structure (3) (1) Cathode (2) Cathode (3) Ano
3	RB095B-60	ROHM	Schottky Barrier Diode 1) Power mold type. (CPD3) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 1.6 1.6 CPD 2.3 2.3 Structure (2) Taping dimensions(Unit : mm) 2.0±0.05 4.0±0.1 8.0±0.1 (1) (3) φ1.55±0.1 　　　　　 0 0.4±0.1 2.5±0.1 TL 10 .1±
4	RBR3LAM40B	ROHM	Schottky Barrier Diode 1) Small power mold type (PMDTM) 2) High reliability 3) Low VF lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM (2) 1.50±0.20 0.95±0.10 lStructure (1) Cathode lConstr
5	RB201A60	Rohm	Schottky barrier diode 1) Cylindrical mold type.(MSR) 2) Low VF. 3) High ESD. ROHM : MSR ① 29±1 3.0±0.2 ① ② 3 29±1 φ2.5±0.2 ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) IVORY H2 BLUE A E H2 Mark Ａ Standard dimensi
6	RB550VAM-30	Rohm	Schottky Barrier Diode High reliability Small mold type Low VF ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) Basic Ordering Unit(
7	RB558W	ROHM	Schottky Barrier Diode High reliability Small mold type Super Low VF ●Inner Circuit Data sheet 　　　　　　　　　　　　　　 NotNeRewcDoemsimgennsded for ●Application ●Packaging Specifications Small current rectification Packing Embossed Tape Reel Size(mm) 180 ●Struct
8	RB228T100NZ	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet Structure Cathode (2) (1) (3) Anode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Abso
9	RB160VAM-60	ROHM	Schottky Barrier Diode 1) Small power mold type (TUMD2M) 2) High reliability 3) Low VF 2.0±0.1 2.5±0.2 (2) ROHM : TUMD2M Manufacture date and factory 0.4±0.10 0～0.1 TUMD2M lStructure (1)Cathode lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit :
10	BAS40HM	ROHM	Schottky Barrier Diode 1) Small mold type (SOT-23) 2) High reliability 3) Low VF Construction Silicon epitaxial planar type 4A ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN Structure (3) (1) Anode (2) NC (3) Cathode (1
11	RB411	Rohm	Schottky barrier diode 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability. 0.2 1.6 + −0.1 2.8±0.2 0~0.1 +0.1 0.4 − 0.05 +0.1 0.15 − 0.06 RB411D Diodes !Electrical characteristic curves (Ta = 25°C) Ta=125°C 100m Ta =12 Ta= 5
12	RB088BM-40	ROHM	Schottky Barrier Diode 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Super low IR lConstruction Silicon epitaxial planar type 12 1.6 1.6 TO-252 2.3 2.3 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date 2 : Serial number lStructure Ca
13	BAS40HMFH	ROHM	Schottky Barrier Diode 1) Small mold type 4A SOT-23 1.0MIN 0.8MIN (SOT-23) r 2) High reliability o 3) Low VF d f Construction e Silicon epitaxial planar type ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) Structure (3) (1) Anode (2) NC (3) C
14	RB558VA150	ROHM	Schottky Barrier Diode 1)Small power mold type.(TUMD2) 2)High reliability 3)AEC-Q101 qualified lConstruction Silicon epitaxial lExternal Dimensions(Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 lLand Size Figure(Unit : mm) 1.1 1.9±0.1 2.5±0.2 0.8 0.5 2.0 TUMD2 lStructure 0.8
15	RB450UM	ROHM	Schottky Barrier Diode 1) Ultra small mold type (UMD3F) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 2.0±0.1 0.32 +0.1 -0.05 Each leads has same dimensions 0.9±0.1 lLand Size Figure (Unit : mm) 1.3 0.53±0.1 0.42
16	RB050L-60	ROHM	Schottky Barrier Diode 1)Small power mold type. (PMDS) 2)Low IR 3)High reliability Construction Silicon epitaxial planar 43 ①② 1.5±0.2 0.1±0.02 　　　 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106   Manufacture Date PMDS Structure Taping specifications (Unit : mm) 2.0±0.0
17	BAS40-05HM	ROHM	Schottky Barrier Diode 1) Small mold type (SOT-23) 2) High reliability 3) Low VF Construction Silicon epitaxial planar type 4D ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN Structure (3) (1) Anode (2) Anode (3) Cathod
18	BAT54HM	ROHM	Schottky Barrier Diode 1) Small power mold type (SOT-23) 2) High reliability 3) Low VF lConstruction Silicon epitaxial planar type 5A ROHM : SSD3 JEDEC : SOT-23 JEITA : - lTaping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN lStructure (3) (1) Anode (2) N.C. (3) Ca
19	BAS40-04HM	ROHM	Schottky Barrier Diode 1) Small mold type (SOT-23) 2) High reliability 3) Low VF Construction Silicon epitaxial planar type 4B ROHM : SSD3 JEDEC : SOT-23 JEITA : - Taping Dimensions (Unit : mm) 2.4 1.0MIN SOT-23 0.8MIN Structure (3) (1) Anode (2) Cathode (3) Ca
20	RBR10BM60A	ROHM	Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Low VF 1 (1) 2 (3) ROHM : TO-252 JEITA : SC-63 1 : Manufacture date 2 : Serial number lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 lStru