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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage lOutline TO-247 TO-247N lInner circuit (1) (2) (3) Datasheet 2) Negligible recovery time/current 3) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode (1) (2) (3) lApplications ・ Switch Mode Powe |
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Rohm |
N-channel SiC power MOSFET 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode p |
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Rohm |
N-channel SiC power MOSFET 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode p |
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Rohm |
N-channel SiC power MOSFET 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode p |
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ROHM |
Automotive Grade SiC Schottky Barrier Diode 1) AEC-Q101 qualified lInner circuit 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior (1) (2) (3) (1) Anode (2) Cathode (3) Anode lApplications ・ On Board Charger lPackaging specifications |
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ROHM |
SiC Schottky Barrier Diode 1) Low forward voltage lInner circuit 2) Negligible recovery time/current 3) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode lApplications ・ Switch Mode Power Supply ・ Uninterruptible Power Supply ・ Solar Inverter ・ Mot |
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ROHM |
N-channel SiC power MOSFET 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive Inner circuit (1) (2) *1 (3) (1) Gate (2) Drain (3) Source *1 Body Diode Application ・Solar inverters ・DC/DC converters ・Switch mode po |
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ROHM |
power MOSFET 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode p |
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ROHM |
SiC Schottky Barrier Diode 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner circuit Datasheet (1) Anode (2) Cathode (3) Anode NotNeRewcDoemsimgennsded for Construction Silicon carbide epitaxial planar type Packaging spec |
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ROHM |
Automotive Grade SiC Schottky Barrier Diode 1) AEC-Q101 qualified lInner circuit 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior (1) Anode (2) Cathode (3) Anode (1) (2) (3) lApplications ・ On Board Charger ・ DC/DC Converter ・ Wirele |
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ROHM |
Single Synchronous Buck DC/DC Converter high-speed transient response. It has a built-in phase compensation circuit. Applications can be created with a few external components. Features ◼ AEC-Q100 Qualified (Note 1) ◼ Single Synchronous Buck DC/DC Converter ◼ Adjustable Soft Start Function |
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Desde 2024. D4U Semiconductor.
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