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Rohm |
Schottky barrier diode 1) Cylindrical mold type.(MSR) 2) Low VF. 3) High ESD. ROHM : MSR ① 29±1 3.0±0.2 ① ② 3 29±1 φ2.5±0.2 ② Manufacture Date zConstruction Silicon epitaxial planar z Taping specifications (Unit : mm) IVORY H2 BLUE A E H2 Mark Ａ Standard dimensi |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) Low IR 3) High reliability Datasheet Structure Cathode (2) (1) (3) Anode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Abso |
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Rohm |
Schottky barrier diode 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 4 Construction Silicon epitaxial planer 205 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) Low IR 3) High reliability 10.0±00..31 3.2±0.2 12.0±0.2 1 15.0±00..24 2.8±00..21 for (1) (3) Anode Anode d Construction nde s Silicon epitaxial planar type 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) ROHM : T |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 |
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ROHM |
Schottky Barrier Diode 1) Cathode common type 2) High reliability 3) Super low IR 10.0± 0.3 0.1 3.2±0.2 12.0±0.2 1 1.2 15.0± 0.4 0.2 2.8±00..21 (1) (2) (3) Anode Cathode Anode 5.0±0.2 8.0±0.2 14.0±0.5 Construction Silicon epitaxial planar type 1.3 0.8 2.45±0. |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 4.5±00..31 2.8±00..21 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar ty |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 4.5±00..31 2.8±00..21 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar ty |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) (2) RB218 NS40 1 (1) (3) 3.5 2.5 8.5 16 lLand size figure (Unit : mm) 11 9.9 2.5 2.54 TO-263S 2.54 lStructure (2) Cathode lConstruction Silicon epitaxial |
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ROHM |
Schottky Barrier Diode High reliability Power mold type Cathode common dual type Super Low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) |
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ROHM |
Schottky Barrier Diode 1) Cathode common type 2) High reliability 3) Super low IR lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) 4.5±00..31 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 lStructure 0.4 0.2 15.0± 12.0±0.2 1 1.2 1.3 0.8 5.0±0.2 8.0±0.2 (1 |
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ROHM |
Schottky Barrier Diode 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 ① 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 Construction Silicon epitaxial planar 1.2 1.3 0.8 (1 |
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ROHM |
Schottky Barrier Diode High reliability Power mold type Cathode common dual type Super Low IR ●Inner Circuit ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Struc |
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ROHM |
Schottky Barrier Diode High reliability Power mold type Cathode common dual type Super Low IR ●Inner Circuit Data sheet ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) |
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ROHM |
Schottky Barrier Diode 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer 205 9 Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25°C) Parameter Symbol Lim |
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ROHM |
Schottky Barrier Diode 1) Cathode common dual type 2) High reliability 3) Super low IR lDimensions (Unit : mm) 10.0±00..31 f3.2±0.2 15.0±00..24 12.0±0.2 5.0±0.2 8.0±0.2 1 1.2 1.3 0.8 4.5±00..31 2.8±00..21 2.6±0.5 14.0±0.5 lConstruction Silicon epitaxial planar ty |
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ROHM |
Schottky Barrier Diode 1) Cathode common type 2) High reliability 3) Super low IR 10.0± 0.3 0.1 3.2±0.2 12.0±0.2 1 1.2 15.0± 0.4 0.2 2.8±00..21 (1) (2) (3) Anode Cathode Anode 5.0±0.2 8.0±0.2 14.0±0.5 Construction Silicon epitaxial planar type 1.3 0.8 2.45±0. |
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Rohm |
Metal Film Resistors |
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Desde 2024. D4U Semiconductor.
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