| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Rohm |
2SK2503 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolu |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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Rohm |
CMOS Voltage Detector ◼ High accuracy detection ◼ Ultra-low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Wide Operating temperature range ◼ Very small and low height package ◼ Package SSOP5 is similar to SOT-23-5 (JEDEC) ◼ Package SSOP3 is sim |
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Rohm |
2SK2504 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolut |
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Rohm |
Small switching Transistors 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maxim |
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Rohm |
CMOS Voltage Detector ◼ High accuracy detection ◼ Ultra-low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Wide Operating temperature range ◼ Very small and low height package ◼ Package SSOP5 is similar to SOT-23-5 (JEDEC) ◼ Package SSOP3 is sim |
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ROHM |
Power MOSFET 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline SOP8 lInner circuit Datasheet lPackaging specifications Packing lApplication Reel size (mm) Switching Type T |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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ROHM |
CMOS Voltage Detector ◼ Counter Timer Built-in ◼ No delay time setting capacitor required ◼ Low current consumption ◼ Two output types (Nch open drain and CMOS output) ◼ Package SSOP3 is similar to SOT-23-3 (JEDEC) ●Typical Application Circuit V DD1 V DD2 Key Specifica |
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Desde 2024. D4U Semiconductor.
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