| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Rohm |
Low Frequency Transistor |
|
|
|
|
Rohm |
2SD2394 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Low frequency amplifier zComplements |
|
|
|
|
Rohm |
Power Transistor 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Low frequency amplifier zComplements |
|
|
|
|
Rohm |
Power Transistor 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. !External dimensions (Units : mm) 2SD2195 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 |
|
|
|
|
Rohm |
Medium Power Transistor e 1)Low saturation voltage, tipically VCE(sat)=130mV at IC/IB=1A/50mA. d 2)Collector-emitter voltage=60V n s 3)PD=2W (Mounted on a ceramic board e n (40×40×0.7mm) ). 4)Complementary PNP Types : 2SB1561. SOT-89 SC-62 MPT3 lInne |
|
|
|
|
Rohm |
General Purpose Transistor 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lOutline SOT-323 SC-70 UMT3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackagi |
|
|
|
|
Rohm |
2SD2396 |
|
|
|
|
Rohm |
Power Transistor |
|
|
|
|
Rohm |
Triple Diffused Planar NPN Silicon Transistor |
|
|
|
|
ROHM |
1ch 4A High Speed Low-side Gate Driver Gate Drive Voltage Range 4.5 V to 18 V Built-in Undervoltage Lockout (UVLO) between VCC and GND Input Logic Voltage Range 2.0 V to 5.5 V In-phase Output with Input signal Small Package SSOP5 Key Specifications Output Voltage Range: 4.5 |
|
|
|
|
Rohm |
High-current gain Power Transistor 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dis |
|
|
|
|
Rohm |
Power Transistor |
|
|
|
|
Rohm |
Medium Power Transistor 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 2SD2212 1.5 0.4 4.0 1.0 2.5 |
|
|
|
|
Rohm |
2SD2318 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector |
|
Desde 2024. D4U Semiconductor.
|