| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ROHM Electronics |
2SD1760 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD18 |
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Rohm |
2SD1761 |
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Rohm |
Power Transistor 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4) Lead Free/RoHS Compliant. 2SD1898 (SC-62) |
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Rohm |
Power Transistor |
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Rohm |
Medium power transistor 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. !External dimensions (Units : mm) 2SD1767 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage |
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Rohm |
Power Transistor 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-214-D57) 264 Transistors FAbsolute maximum r |
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Rohm |
Power Transistor 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00 |
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Rohm |
2SD1758 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / www.DataSheet4U.com 2SB911M FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Unit |
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Rohm |
2SD1762 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-214-D57) 264 Transistors www.DataSheet4U.com |
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ROHM |
2SD1765 |
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Rohm |
2SD1763A |
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ROHM Electronics |
2SD1764 |
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ROHM |
(2SDxxxx) Medium Power Transistor |
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Rohm |
2SD1768S 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.5±0.1 0.2 4.5+ −0.1 1.6±0.1 0.2 1.5 + −0.1 4.0±0.3 2.5+0.2 −0.1 (1) 1 |
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ROHM |
MOSFET 1) Low on-resistance. 4) 4V drive. 4) High power package. Application Switching Dimensions (Unit : mm) CPT3 (SC-63) Packaging specifi |
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Rohm |
Power Transistor 1) Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA) 2) Optimal for muting. !External dimensions (Units : mm) (1) 0.4 (3) !Absolute maximum ratings (Ta = 25°C) 0.15 1.6 2.8 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage |
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Rohm |
Medium Power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor 0.5±0.1 Dimensions (Unit : mm) 2SD1766 4.5+−00..21 1.6±0.1 1.5 +0.2 −0.1 2SD175 |
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Rohm |
Power Transistor 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1760 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 2SD18 |
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ROHM |
Power MOSFET 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lOutline TO-252 SC-63 CPT3 lInner circuit lPackaging specifications Pa |
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Rohm |
Power transistor 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. zEquivalent circuit C B RBE 4kΩ C : Collector B : Base E : Emitter E zAbsolute maximum ratings (Ta=25°C) |
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Desde 2024. D4U Semiconductor.
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