| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Rohm |
2SC5511 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1 |
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ROHM |
Power Transistor 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SA2017. !Absolute maximum ratings (Ta = 25°C) Parame |
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Rohm |
Power Transistor 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SA2017. !Absolute maximum ratings (Ta = 25°C) Parame |
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Rohm |
NPN TRANSISTOR 1)High current 2)Low VCE(sat). VCE(sat)≦250mV at IC=200mA/IB=10mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER lOutline SOT-723 SOT-416 2SC5663 (VMT3) 2SC5585 (EMT3) lInner circuit 2SC5663 2SC5585 lPackaging |
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Rohm |
Transistors 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1 |
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Desde 2024. D4U Semiconductor.
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