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Rohm |
Transistor |
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ROHM |
NPN Silicon Transistor |
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Rohm |
2SC4137 |
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Rohm |
High-voltage Amplifier Transistor 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K. lOutline SOT-323 SOT-346 2SC4102 (UMT3) 2SC3906K (SMT3) lInner circuit lApplication HIGH-VOLTAGE AMPLIFIER lPackaging specifications |
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Rohm |
Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-237-C74) 24 |
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Rohm |
Power Transistor 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collecto |
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ROHM |
High-voltage Amplifier Transistor 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SARA41C HZG lOutline SOT-23 SST3 lInner circuit Datasheet AEC-Q101 Qualified lApplication HIGH-VOLTAGE AMPLIFIER lPackaging specifications Part No. Package 2SCRC41C HZG SO |
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Desde 2024. D4U Semiconductor.
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