No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ROHM Electronics |
2SB1370 |
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Rohm |
Power Transistor |
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Rohm |
Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic |
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Rohm |
2SB1357 or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buy |
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Rohm |
TRANSISTORS |
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ROHM Electronics |
2SB1340 BO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDIT |
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ROHM |
2SB1316 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltag |
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Rohm |
PNP Transistor s or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for bu |
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Rohm |
Digital transistors 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic |
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Rohm |
Epitaxial Planar PNP Silicon Transistor |
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Rohm |
Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Un |
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Rohm |
Power Transistor |
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ROHM |
PNP Transistor |
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Rohm |
TRANSISTORS |
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Rohm |
TRANSISTORS |
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Rohm |
Power Transistor from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of |
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|
Rohm |
Power Transistor 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltag |
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|
Rohm |
Power Transistor |
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|
|
Rohm |
Low Frequency Transistor 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Un |
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Rohm |
TRANSISTORS |
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